NVMFS5C670NLT1G
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onsemi NVMFS5C670NLT1G

Manufacturer No:
NVMFS5C670NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 17A/71A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5C670NLT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed to offer superior electrical characteristics, making it suitable for a variety of power management applications. With its compact footprint and enhanced performance features, it is an ideal choice for systems requiring high efficiency and reliability.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Drain-Source Voltage (Vds)60 V
Maximum Continuous Drain Current (Id)71 A
On-Resistance (Rds(on))6.1 mΩ (typical at Vgs = 10 V)
Maximum Operating Temperature+175 °C
Power Dissipation (Pd)61 W
Channel ModeEnhancement
QualificationAEC-Q101

Key Features

  • Compact Design: The MOSFET features a small footprint, making it ideal for space-constrained applications.
  • Low On-Resistance: With an Rds(on) of 6.1 mΩ, it minimizes conduction losses and enhances overall system efficiency.
  • Low QG and Capacitance: Reduces driver losses, ensuring better performance and reliability.
  • High Current Handling: Capable of handling up to 71 A of continuous drain current.

Applications

The NVMFS5C670NLT1G is suitable for various power management applications, including but not limited to:

  • Automotive systems, particularly those requiring AEC-Q101 qualification.
  • Industrial power supplies and motor control systems.
  • High-power DC-DC converters.
  • Power management in consumer electronics and computing systems.

Q & A

  1. What is the maximum drain-source voltage of the NVMFS5C670NLT1G?
    The maximum drain-source voltage is 60 V.
  2. What is the typical on-resistance of the NVMFS5C670NLT1G?
    The typical on-resistance is 6.1 mΩ at Vgs = 10 V.
  3. What is the maximum continuous drain current of the NVMFS5C670NLT1G?
    The maximum continuous drain current is 71 A.
  4. What is the maximum operating temperature of the NVMFS5C670NLT1G?
    The maximum operating temperature is +175 °C.
  5. Is the NVMFS5C670NLT1G AEC-Q101 qualified?
    Yes, the NVMFS5C670NLT1G is AEC-Q101 qualified.
  6. What are the key features of the NVMFS5C670NLT1G?
    The key features include a compact design, low on-resistance, low QG and capacitance, and high current handling.
  7. What are some typical applications of the NVMFS5C670NLT1G?
    Typical applications include automotive systems, industrial power supplies, high-power DC-DC converters, and power management in consumer electronics and computing systems.
  8. What is the power dissipation capability of the NVMFS5C670NLT1G?
    The power dissipation capability is 61 W.
  9. What is the channel mode of the NVMFS5C670NLT1G?
    The channel mode is enhancement.
  10. Where can I find detailed specifications for the NVMFS5C670NLT1G?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:17A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.6W (Ta), 61W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C670NLT1G NVMFS5C680NLT1G NVMFS5C677NLT1G NVMFS5C670NT1G NVMFS5C670NLT3G NVMFS5C673NLT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Discontinued at Digi-Key Active Active Active Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 71A (Tc) 8.1A (Ta), 21A (Tc) 11A (Ta), 36A (Tc) 17A (Ta), 71A (Tc) 17A (Ta), 71A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 35A, 10V 27.5mOhm @ 7.5A, 10V 15mOhm @ 10A, 10V 7mOhm @ 11A, 10V 6.1mOhm @ 35A, 10V 9.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.2V @ 13µA 2V @ 25µA 4V @ 53µA 2V @ 250µA 2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 5.8 nC @ 10 V 9.7 nC @ 10 V 14.4 nC @ 10 V 20 nC @ 10 V 9.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V 330 pF @ 25 V 620 pF @ 25 V 1035 pF @ 30 V 1400 pF @ 25 V 880 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 3.6W (Ta), 61W (Tc) 3.4W (Ta), 24W (Tc) 3.5W (Ta), 37W (Tc) 3.6W (Ta), 61W (Tc) 3.6W (Ta), 61W (Tc) 3.6W (Ta), 46W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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