Overview
The NVMFS5C646NLWFAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a compact DFN5/DFNW5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and suitability for automotive and industrial applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 93 | A |
| Power Dissipation (TJ = 25°C) | PD | 79 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 750 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 3.8 - 4.7 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Total Gate Charge (VGS = 10 V, VDS = 30 V, ID = 25 A) | QG(TOT) | 33.7 | nC |
Key Features
- Small Footprint: Compact DFN5/DFNW5 package (5x6 mm) for space-constrained designs.
- Low RDS(on): Minimizes conduction losses with a low on-resistance of 3.8 - 4.7 mΩ at VGS = 10 V and ID = 50 A.
- Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
- Wettable Flank Option: Enhanced optical inspection capability with the wettable flank option (NVMFS5C646NLWF).
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and suitability for automotive and industrial applications.
- Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial Power Management: Ideal for high-current power management in industrial settings.
- DC-DC Converters: Used in high-efficiency DC-DC converters due to its low on-resistance and low gate charge.
- Motor Control: Applicable in motor control circuits requiring high current handling and low losses.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C646NLWFAFT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at 25°C?
The continuous drain current (ID) at 25°C is 93 A.
- What is the typical on-resistance of the MOSFET?
The typical on-resistance (RDS(on)) is 3.8 - 4.7 mΩ at VGS = 10 V and ID = 50 A.
- Is the NVMFS5C646NLWFAFT1G AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable.
- What is the operating junction temperature range?
The operating junction temperature range is −55 to +175°C.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) at TA = 25°C and tp = 10 μs is 750 A.
- Is the device Pb-free and RoHS compliant?
Yes, the device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the total gate charge at VGS = 10 V and VDS = 30 V?
The total gate charge (QG(TOT)) at VGS = 10 V, VDS = 30 V, and ID = 25 A is 33.7 nC.
- What are the typical switching times for this MOSFET?
The typical turn-on delay time (td(ON)) is 10.4 ns, rise time (tr) is 14.9 ns, turn-off delay time (td(OFF)) is 23.6 ns, and fall time (tf) is 5.1 ns.
- What is the forward diode voltage at IS = 50 A and TJ = 25°C?
The forward diode voltage (VSD) at IS = 50 A and TJ = 25°C is 0.88 - 1.2 V.
