NVMFS5C604NLAFT1G
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onsemi NVMFS5C604NLAFT1G

Manufacturer No:
NVMFS5C604NLAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 287A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5C604NLAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. With its compact DFN5 package (4.90 x 5.90 x 1.00 mm), it is ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (RJC, TC = 25°C) ID 287 A
Continuous Drain Current (RJA, TA = 25°C) ID 40 A
Power Dissipation (RJC, TC = 25°C) PD 200 W
Power Dissipation (RJA, TA = 25°C) PD 3.9 W
Pulsed Drain Current (TA = 25°C, tp = 10 μs) IDM 900 A
Operating Junction and Storage Temperature TJ, Tstg −55 to +175 °C
Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) RDS(on) 0.93 - 1.2
Gate Threshold Voltage VGS(TH) 1.2 - 2.0 V
Input Capacitance CISS 8900 pF

Key Features

  • Small Footprint: Compact DFN5 package (4.90 x 5.90 x 1.00 mm) for space-constrained designs.
  • Low RDS(on): Minimizes conduction losses with a typical on-resistance of 0.93 - 1.2 mΩ at VGS = 10 V and ID = 50 A.
  • Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
  • Wettable Flank Option: Available with wettable flanks for enhanced optical inspection (NVMFS5C604NLWFT1G).
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Power Management: Ideal for power management in DC-DC converters, motor control, and power supplies.
  • Industrial Control: Used in industrial control systems, including motor drives and power switching applications.
  • Consumer Electronics: Applicable in high-power consumer electronics such as gaming consoles and high-end computing systems.

Q & A

  1. What is the maximum drain-to-source voltage of the NVMFS5C604NLAFT1G?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the typical on-resistance of the NVMFS5C604NLAFT1G?

    The typical on-resistance (RDS(on)) is 0.93 - 1.2 mΩ at VGS = 10 V and ID = 50 A.

  3. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) is 287 A for RJC and 40 A for RJA at 25°C.

  4. Is the NVMFS5C604NLAFT1G AEC-Q101 qualified?

    Yes, the device is AEC-Q101 qualified and PPAP capable.

  5. What is the operating junction temperature range?

    The operating junction temperature range is −55 to +175°C.

  6. What is the input capacitance of the NVMFS5C604NLAFT1G?

    The input capacitance (CISS) is 8900 pF.

  7. Is the NVMFS5C604NLAFT1G Pb-Free and RoHS compliant?

    Yes, the device is Pb-Free and RoHS compliant.

  8. What is the package type of the NVMFS5C604NLAFT1G?

    The package type is DFN5 (4.90 x 5.90 x 1.00 mm).

  9. What are the typical applications of the NVMFS5C604NLAFT1G?

    Typical applications include automotive systems, power management, industrial control, and high-power consumer electronics.

  10. How does the wettable flank option benefit the NVMFS5C604NLAFT1G?

    The wettable flank option enhances optical inspection, which is particularly useful in high-reliability applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:287A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C604NLAFT1G NVMFS5C604NLAFT3G NVMFS5C604NLWFT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Not For New Designs Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 287A (Tc) 287A (Tc) 40A (Ta), 287A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 50A, 10V 1.2mOhm @ 50A, 10V 1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 4.5 V 52 nC @ 4.5 V 120 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8900 pF @ 25 V 8900 pF @ 25 V 8900 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200W (Tc) 200W (Tc) 3.9W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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