Overview
The NVMFS5C604NLWFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance (RDS(on)) and minimal conduction losses, making it suitable for a variety of high-power applications. The MOSFET features a small footprint of 5x6 mm, which is ideal for compact design requirements. It is also AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 287 | A |
| Continuous Drain Current (TC = 100°C) | ID | 203 | A |
| Power Dissipation (TC = 25°C) | PD | 200 | W |
| Power Dissipation (TC = 100°C) | PD | 100 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 900 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 0.93 - 1.2 | mΩ |
| Drain-to-Source On Resistance (VGS = 4.5 V, ID = 50 A) | RDS(on) | 1.25 - 1.7 | mΩ |
Key Features
- Small Footprint: The device features a compact 5x6 mm footprint, ideal for space-constrained designs.
- Low RDS(on): Minimizes conduction losses with an on-resistance as low as 0.93 mΩ at VGS = 10 V and ID = 50 A.
- Low QG and Capacitance: Reduces driver losses due to low total gate charge and capacitance.
- Wettable Flank Option: Available with wettable flanks for enhanced optical inspection (NVMFS5C604NLWFT1G).
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Supplies: Ideal for high-power supply designs requiring low on-resistance and minimal conduction losses.
- Motor Control: Used in motor control circuits where high current handling and low RDS(on) are critical.
- Industrial Power Systems: Applicable in industrial power systems that demand high reliability and performance.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C604NLWFT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at 25°C?
The continuous drain current (ID) at 25°C is 287 A.
- What is the on-resistance of the MOSFET at VGS = 10 V and ID = 50 A?
The on-resistance (RDS(on)) at VGS = 10 V and ID = 50 A is between 0.93 mΩ and 1.2 mΩ.
- Is the NVMFS5C604NLWFT1G AEC-Q101 qualified?
Yes, the NVMFS5C604NLWFT1G is AEC-Q101 qualified and PPAP capable.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is from −55°C to +175°C.
- What is the pulsed drain current at 25°C for a pulse width of 10 μs?
The pulsed drain current (IDM) at 25°C for a pulse width of 10 μs is 900 A.
- Is the device Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant.
- What is the typical gate threshold voltage?
The typical gate threshold voltage (VGS(TH)) is between 1.2 V and 2.0 V.
- What is the forward diode voltage at 25°C?
The forward diode voltage (VSD) at 25°C is between 0.78 V and 1.2 V.
- What is the reverse recovery time?
The reverse recovery time (tRR) is approximately 98 ns.
