NVMFS5C404NLWFAFT1G
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onsemi NVMFS5C404NLWFAFT1G

Manufacturer No:
NVMFS5C404NLWFAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 370A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5C404NLWFAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a compact DFN5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and suitability for automotive and other demanding environments.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 40 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 370 A
Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) RDS(on) 0.67 mΩ
Junction-to-Case Thermal Resistance RJC 0.75 °C/W °C/W
Junction-to-Ambient Thermal Resistance RJA 39 °C/W °C/W
Gate Threshold Voltage VGS(TH) 1.2 - 2.0 V V
Total Gate Charge (VGS = 10 V, VDS = 20 V; ID = 50 A) QG(TOT) 181 nC nC

Key Features

  • Small Footprint: The DFN5 package measures 5x6 mm, ideal for compact designs.
  • Low RDS(on): Minimizes conduction losses with a low on-resistance of 0.67 mΩ at VGS = 10 V and ID = 50 A.
  • Low QG and Capacitance: Reduces driver losses due to low total gate charge and capacitance.
  • Wettable Flank Option: The NVMFS5C404NLWFAFT1G features wettable flanks for enhanced optical inspection.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and suitability for automotive applications.
  • Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

The NVMFS5C404NLWFAFT1G is suitable for a variety of high-current applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and motor control.
  • Industrial power supplies: Its high current handling and low on-resistance make it suitable for high-power supply applications.
  • Motor control and drives: Used in motor control circuits where high current and low losses are critical.
  • Power conversion: Suitable for DC-DC converters, inverters, and other power conversion applications.

Q & A

  1. What is the maximum drain-to-source voltage of the NVMFS5C404NLWFAFT1G?

    The maximum drain-to-source voltage (VDSS) is 40 V.

  2. What is the continuous drain current rating of this MOSFET at TC = 25°C?

    The continuous drain current (ID) is 370 A at TC = 25°C.

  3. What is the typical on-resistance of the NVMFS5C404NLWFAFT1G?

    The typical on-resistance (RDS(on)) is 0.67 mΩ at VGS = 10 V and ID = 50 A.

  4. Is the NVMFS5C404NLWFAFT1G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  5. What is the package type of the NVMFS5C404NLWFAFT1G?

    The package type is DFN5, measuring 5x6 mm.

  6. Is the NVMFS5C404NLWFAFT1G environmentally compliant?

    Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  7. What is the junction-to-case thermal resistance of this MOSFET?

    The junction-to-case thermal resistance (RJC) is 0.75 °C/W.

  8. What is the gate threshold voltage range of the NVMFS5C404NLWFAFT1G?

    The gate threshold voltage (VGS(TH)) range is 1.2 to 2.0 V.

  9. What are some typical applications for the NVMFS5C404NLWFAFT1G?

    It is suitable for automotive systems, industrial power supplies, motor control, and power conversion applications.

  10. Does the NVMFS5C404NLWFAFT1G feature wettable flanks?

    Yes, it features wettable flanks for enhanced optical inspection.

  11. What is the total gate charge of the NVMFS5C404NLWFAFT1G at VGS = 10 V and ID = 50 A?

    The total gate charge (QG(TOT)) is 181 nC at VGS = 10 V, VDS = 20 V, and ID = 50 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:370A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.67mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12168 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C404NLWFAFT1G NVMFS5C404NWFAFT1G NVMFS5C404NLWFAFT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 370A (Tc) 53A (Ta), 378A (Tc) 370A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.67mOhm @ 50A, 10V 0.7mOhm @ 50A, 10V 0.67mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 4.5 V 128 nC @ 10 V 81 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12168 pF @ 25 V 8400 pF @ 25 V 12168 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200W (Tc) 3.9W (Ta), 200W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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