NVMFS5C404NLWFT1G
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onsemi NVMFS5C404NLWFT1G

Manufacturer No:
NVMFS5C404NLWFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 49A/352A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5C404NLWFT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed for demanding applications that require low on-state resistance and high current handling capabilities. It features a compact 5x6 mm DFN package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free, halogen-free, and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 40 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 49 A (Ta), 352 A (Tc) A
Maximum Power Dissipation (Ta) PD 3.9 W (Ta), 200 W (Tc) W
On-Resistance (RDS(on)) at VGS = 10 V RDS(on) 0.67 mΩ
Gate Threshold Voltage VGS(TH) 1.2 - 2.0 V V
Total Gate Charge at VGS = 10 V QG 181 nC nC
Input Capacitance Ciss 12168 pF pF
Junction-to-Case Thermal Resistance RθJC 0.75 °C/W °C/W

Key Features

  • Compact Design: Small footprint of 5x6 mm in a DFN package, ideal for space-constrained applications.
  • Low On-Resistance: Minimizes conduction losses with an RDS(on) of 0.67 mΩ at VGS = 10 V.
  • Low QG and Capacitance: Reduces driver losses with a total gate charge of 181 nC at VGS = 10 V and input capacitance of 12168 pF.
  • Wettable Flank Option: Available with wettable flanks for enhanced optical inspection.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • Environmental Compliance: Pb-free, halogen-free, and RoHS compliant.

Applications

The NVMFS5C404NLWFT1G is suitable for a variety of high-power applications, including:

  • Automotive systems: Such as power steering, anti-lock braking systems (ABS), and electric power steering (EPS).
  • Industrial power supplies: High-efficiency power conversion and switching applications.
  • Motor control: DC-DC converters, motor drives, and other motor control systems.
  • Renewable energy systems: Solar and wind power inverters and converters.

Q & A

  1. What is the maximum drain-to-source voltage of the NVMFS5C404NLWFT1G?

    The maximum drain-to-source voltage (VDSS) is 40 V.

  2. What is the typical on-resistance of the NVMFS5C404NLWFT1G at VGS = 10 V?

    The typical on-resistance (RDS(on)) at VGS = 10 V is 0.67 mΩ.

  3. What is the gate threshold voltage range of the NVMFS5C404NLWFT1G?

    The gate threshold voltage (VGS(TH)) range is 1.2 to 2.0 V.

  4. Is the NVMFS5C404NLWFT1G AEC-Q101 qualified?

    Yes, the NVMFS5C404NLWFT1G is AEC-Q101 qualified and PPAP capable.

  5. What is the package type of the NVMFS5C404NLWFT1G?

    The package type is a 5x6 mm DFN (Dual Flat No-leads) package.

  6. What is the maximum continuous drain current at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 49 A (Ta) and 352 A (Tc).

  7. Is the NVMFS5C404NLWFT1G RoHS compliant?

    Yes, the NVMFS5C404NLWFT1G is Pb-free, halogen-free, and RoHS compliant.

  8. What is the typical total gate charge at VGS = 10 V?

    The typical total gate charge (QG) at VGS = 10 V is 181 nC.

  9. What is the junction-to-case thermal resistance?

    The junction-to-case thermal resistance (RθJC) is 0.75 °C/W.

  10. What are the environmental benefits of the NVMFS5C404NLWFT1G?

    The device is Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:49A (Ta), 352A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.75mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:181 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12168 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C404NLWFT1G NVMFS5C406NLWFT1G NVMFS5C404NLWFT3G NVMFS5C404NWFT1G NVMFS5C404NLAFT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 49A (Ta), 352A (Tc) 53A (Ta), 362A (Tc) 49A (Ta), 352A (Tc) 53A (Ta), 378A (Tc) 370A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.75mOhm @ 50A, 10V 0.7mOhm @ 50A, 10V 0.75mOhm @ 50A, 10V 0.7mOhm @ 50A, 10V 0.67mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 280µA 2V @ 250µA 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 181 nC @ 10 V 149 nC @ 10 V 181 nC @ 10 V 128 nC @ 10 V 81 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12168 pF @ 25 V 9400 pF @ 20 V 12168 pF @ 25 V 8400 pF @ 25 V 12168 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 3.9W (Ta), 200W (Tc) 3.9W (Ta), 179W (Tc) 3.9W (Ta), 200W (Tc) 3.9W (Ta), 200W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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