NVMFS5C404NLAFT1G
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onsemi NVMFS5C404NLAFT1G

Manufacturer No:
NVMFS5C404NLAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 370A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5C404NLAFT1G is an automotive Power MOSFET designed and manufactured by onsemi. This single N-Channel MOSFET is housed in a compact 5x6mm flat lead package, which enhances thermal performance and efficiency. It is AEC-Q101 qualified and PPAP capable, making it suitable for various automotive applications. The device features a low on-state resistance (RDS(on)) of 0.67 mΩ and can handle high current levels up to 370 A. It also includes a wettable flank option for enhanced optical inspection.

Key Specifications

Parameter Value
Channel Polarity N-Channel
V(BR)DSS Min (V) 40 V
VGS Max (V) 20 V
VGS(th) Max (V) 2 V
ID Max (A) 352 A
PD Max (W) 200 W
RDS(on) Max @ VGS = 10 V (mΩ) 0.67 mΩ
Qg Typ @ VGS = 4.5 V (nC) 81 nC
Qg Typ @ VGS = 10 V (nC) 181 nC
Ciss Typ (pF) 12168 pF
Minimum Operating Temperature (°C) -55 °C
Maximum Operating Temperature (°C) +175 °C
Package Type DFN5 5x6, 1.27P (SO-8FL)
MSL Type 1
MSL Temp (°C) 260 °C
Container Type REEL
Container Qty. 1500

Key Features

  • Compact 5x6mm flat lead package for enhanced thermal performance and efficiency.
  • Low on-state resistance (RDS(on)) of 0.67 mΩ.
  • High current handling capability up to 370 A.
  • Wettable flank option for enhanced optical inspection.
  • AEC-Q101 qualified and PPAP capable for automotive applications.
  • RoHS compliant.
  • Low Qg and Ciss for reduced switching losses.
  • High side and low side driver capabilities.

Applications

  • Reverse Battery Protection
  • Switching Power Supplies
  • Power Switches (High Side Driver, Low Side Driver, H-Bridges)
  • Solenoid Drivers – ABS, Fuel Injection
  • Motor Control – EPS, Wipers, Fans, Seats, etc.
  • Load Switch – ECU, Chassis, Body

Q & A

  1. What is the maximum drain-source breakdown voltage of the NVMFS5C404NLAFT1G?

    The maximum drain-source breakdown voltage (V(BR)DSS) is 40 V.

  2. What is the maximum continuous drain current for this MOSFET?

    The maximum continuous drain current (ID) is 352 A.

  3. What is the typical on-state resistance (RDS(on)) at VGS = 10 V?

    The typical on-state resistance (RDS(on)) at VGS = 10 V is 0.67 mΩ.

  4. Is the NVMFS5C404NLAFT1G AEC-Q101 qualified?

    Yes, the NVMFS5C404NLAFT1G is AEC-Q101 qualified and PPAP capable.

  5. What is the package type of the NVMFS5C404NLAFT1G?

    The package type is DFN5 5x6, 1.27P (SO-8FL).

  6. What are the minimum and maximum operating temperatures for this MOSFET?

    The minimum operating temperature is -55 °C, and the maximum operating temperature is +175 °C.

  7. What is the wettable flank option for this MOSFET?

    The wettable flank option (NVMFS5C404NLWF) is available for enhanced optical inspection.

  8. Is the NVMFS5C404NLAFT1G RoHS compliant?

    Yes, the NVMFS5C404NLAFT1G is RoHS compliant.

  9. What are some common applications for the NVMFS5C404NLAFT1G?

    Common applications include reverse battery protection, switching power supplies, power switches, solenoid drivers, motor control, and load switches.

  10. How many units are typically packaged in a reel?

    The device is packaged in reels of 1500 units.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:370A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.67mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12168 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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NVMFS5C404NLAFT1G
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MOSFET N-CH 40V 370A 5DFN
NVMFS5C404NLT3G
NVMFS5C404NLT3G
MOSFET N-CH 40V 49A/352A 5DFN
NVMFS5C404NLWFT3G
NVMFS5C404NLWFT3G
MOSFET N-CH 40V 49A/352A 5DFN
NVMFS5C404NLT1G
NVMFS5C404NLT1G
MOSFET N-CH 40V 49A/352A 5DFN
NVMFS5C404NLWFT1G
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Similar Products

Part Number NVMFS5C404NLAFT1G NVMFS5C404NLAFT3G NVMFS5C404NLWFT1G NVMFS5C404NAFT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Not For New Designs Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 370A (Tc) 370A (Tc) 49A (Ta), 352A (Tc) 53A (Ta), 378A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 0.67mOhm @ 50A, 10V 0.67mOhm @ 50A, 10V 0.75mOhm @ 50A, 10V 0.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 4.5 V 81 nC @ 4.5 V 181 nC @ 10 V 128 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12168 pF @ 25 V 12168 pF @ 25 V 12168 pF @ 25 V 8400 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 200W (Tc) 200W (Tc) 3.9W (Ta), 200W (Tc) 3.9W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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