NVMFS5C404NAFT1G
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onsemi NVMFS5C404NAFT1G

Manufacturer No:
NVMFS5C404NAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 53A/378A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5C404NAFT1G is a high-performance, single N-Channel MOSFET produced by onsemi. This device is designed for automotive and industrial applications, meeting the stringent requirements of AEC-Q101 and PPAP (Production Part Approval Process) capabilities. It features a compact 8-PowerTDFN package with 5 leads, making it ideal for space-constrained designs. The MOSFET is known for its low on-resistance (Rds(on)) and low gate charge (Qg), which minimize conduction and driver losses, respectively.

Key Specifications

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 53 A (Ta), 378 A (Tc)
Rds On (Max) @ Id, Vgs 0.7 mΩ @ 50 A, 10 V
Gate Charge (Qg) (Max) @ Vgs 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 25 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 175°C (TJ)
Package 8-PowerTDFN, 5 Leads
Power Dissipation (Max) 3.9 W (Ta), 200 W (Tc)
Vgs (Max) ±20 V
Vgs(th) (Max) @ Id 4 V @ 250 μA

Key Features

  • Low On-Resistance (Rds(on)): Minimizes conduction losses, ensuring high efficiency in power applications.
  • Low Gate Charge (Qg): Reduces driver losses and enhances switching performance.
  • Compact Package: The 8-PowerTDFN package with 5 leads offers a small footprint, ideal for compact designs.
  • AEC-Q101 Qualified and PPAP Capable: Meets automotive industry standards for reliability and performance.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with global regulations.
  • Wide Operating Temperature Range: Operates from -55°C to 175°C, making it suitable for various environmental conditions.

Applications

  • Automotive Systems: Ideal for use in automotive powertrain, body, and chassis applications due to its AEC-Q101 qualification.
  • Industrial Power Systems: Suitable for high-power industrial applications requiring low on-resistance and high efficiency.
  • Power Supplies and DC-DC Converters: Used in power supply units and DC-DC converters where high switching performance is necessary.
  • Motor Control and Drives: Applied in motor control and drive systems to manage high current and voltage levels efficiently.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the NVMFS5C404NAFT1G MOSFET?

    The maximum drain to source voltage (Vdss) is 40 V.

  2. What is the typical on-resistance (Rds(on)) of this MOSFET?

    The typical on-resistance (Rds(on)) is 0.7 mΩ at 50 A and 10 V.

  3. What is the operating temperature range of the NVMFS5C404NAFT1G?

    The operating temperature range is from -55°C to 175°C (TJ).

  4. Is the NVMFS5C404NAFT1G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  5. What is the maximum gate-source voltage (Vgs) for this MOSFET?

    The maximum gate-source voltage (Vgs) is ±20 V.

  6. What is the package type and mounting method of the NVMFS5C404NAFT1G?

    The package type is 8-PowerTDFN with 5 leads, and the mounting method is surface mount.

  7. What is the maximum power dissipation of this MOSFET?

    The maximum power dissipation is 3.9 W (Ta) and 200 W (Tc).

  8. Is the NVMFS5C404NAFT1G Pb-free and RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  9. What is the gate charge (Qg) of the NVMFS5C404NAFT1G?

    The gate charge (Qg) is 128 nC at 10 V.

  10. What are some common applications of the NVMFS5C404NAFT1G MOSFET?

    Common applications include automotive systems, industrial power systems, power supplies, DC-DC converters, and motor control and drives.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:53A (Ta), 378A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:128 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C404NAFT1G NVMFS5C404NLAFT1G NVMFS5C404NAFT3G NVMFS5C404NWFT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Not For New Designs Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 53A (Ta), 378A (Tc) 370A (Tc) 53A (Ta), 378A (Tc) 53A (Ta), 378A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 10V 10V
Rds On (Max) @ Id, Vgs 0.7mOhm @ 50A, 10V 0.67mOhm @ 50A, 10V 0.7mOhm @ 50A, 10V 0.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 128 nC @ 10 V 81 nC @ 4.5 V 128 nC @ 10 V 128 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 25 V 12168 pF @ 25 V 8400 pF @ 25 V 8400 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3.9W (Ta), 200W (Tc) 200W (Tc) 3.9W (Ta), 200W (Tc) 3.9W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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