NVMFS5C404NT1G
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onsemi NVMFS5C404NT1G

Manufacturer No:
NVMFS5C404NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 49A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5C404NT1G is a high-performance, single N-Channel power MOSFET developed by onsemi. This device is designed for demanding applications that require low on-state resistance and high current handling capabilities. With a drain-source breakdown voltage of 40 V and a maximum drain current of 378 A, it is well-suited for a variety of power management and automotive applications. The MOSFET features a small footprint in a DFN-5 package, making it ideal for compact designs.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Breakdown Voltage V(BR)DSS 40 V
Maximum Drain Current ID 378 A
Drain-Source On-Resistance RDS(on) 0.7 mΩ @ VGS = 10 V
Gate-Source Voltage VGS ±20 V
Threshold Voltage VGS(th) 2.2 V
Total Gate Charge QG(TOT) 128 nC @ VGS = 10 V, VDS = 20 V nC
Input Capacitance CISS 8400 pF @ VGS = 0 V, f = 1 MHz, VDS = 25 V pF
Maximum Operating Temperature TJ -55 to +175 °C
Power Dissipation Pd 200 W W

Key Features

  • Low RDS(on): Minimizes conduction losses with a low on-resistance of 0.7 mΩ at VGS = 10 V.
  • Small Footprint: Compact design in a DFN-5 package (5x6 mm) for space-efficient applications.
  • Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
  • AEC-Q101 Qualified and PPAP Capable: Meets automotive standards for reliability and performance.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • Wettable Flank Option: Available in a wettable flank version for enhanced optical inspection.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and high reliability.
  • Power Management: Ideal for power management systems requiring high current handling and low on-state resistance.
  • Industrial Power Supplies: Used in industrial power supplies and DC-DC converters where high efficiency is crucial.
  • Motor Control: Applicable in motor control circuits for efficient and reliable operation.

Q & A

  1. What is the maximum drain-source breakdown voltage of the NVMFS5C404NT1G?

    The maximum drain-source breakdown voltage is 40 V.

  2. What is the maximum drain current of the NVMFS5C404NT1G?

    The maximum drain current is 378 A.

  3. What is the typical on-resistance of the NVMFS5C404NT1G at VGS = 10 V?

    The typical on-resistance is 0.7 mΩ at VGS = 10 V.

  4. What is the operating temperature range of the NVMFS5C404NT1G?

    The operating temperature range is -55°C to +175°C.

  5. Is the NVMFS5C404NT1G AEC-Q101 qualified?

    Yes, the NVMFS5C404NT1G is AEC-Q101 qualified.

  6. What package type is the NVMFS5C404NT1G available in?

    The NVMFS5C404NT1G is available in a DFN-5 package (5x6 mm).

  7. What is the total gate charge of the NVMFS5C404NT1G at VGS = 10 V and VDS = 20 V?

    The total gate charge is 128 nC at VGS = 10 V and VDS = 20 V.

  8. Is the NVMFS5C404NT1G Pb-Free and RoHS compliant?

    Yes, the NVMFS5C404NT1G is Pb-Free and RoHS compliant.

  9. What is the power dissipation capability of the NVMFS5C404NT1G?

    The power dissipation capability is up to 200 W.

  10. What are some common applications for the NVMFS5C404NT1G?

    Common applications include automotive systems, power management, industrial power supplies, and motor control circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:378A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:128 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C404NT1G NVMFS5C406NT1G NVMFS5C404NT3G NVMFS5C404NLT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 378A (Tc) 52A (Ta), 353A (Tc) 53A (Ta), 378A (Tc) 49A (Ta), 352A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.7mOhm @ 50A, 10V 0.8mOhm @ 50A, 10V 0.7mOhm @ 50A, 10V 0.75mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 280µA 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 128 nC @ 10 V 110 nC @ 10 V 128 nC @ 10 V 181 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 25 V 7288 pF @ 20 V 8400 pF @ 25 V 12168 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3.9W (Ta), 200W (Tc) 3.9W (Ta), 179W (Tc) 3.9W (Ta), 200W (Tc) 3.9W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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