Overview
The NVMFS5C404NWFAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. The MOSFET features a small footprint in a DFN5 package, which is ideal for compact design requirements.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 378 | A |
| Continuous Drain Current (TC = 100°C) | ID | 267 | A |
| Power Dissipation (TC = 25°C) | PD | 200 | W |
| Power Dissipation (TC = 100°C) | PD | 100 | W |
| On-Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 0.7 | mΩ |
| Junction-to-Case Thermal Resistance | RθJC | 0.75 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 39 | °C/W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
Key Features
- Small Footprint: The device is packaged in a compact DFN5 (5x6 mm) or DFNW5 (4.90x5.90 mm) package, ideal for space-constrained designs.
- Low On-Resistance: With an RDS(on) of 0.7 mΩ at VGS = 10 V and ID = 50 A, it minimizes conduction losses.
- Low QG and Capacitance: Low total gate charge (QG(TOT)) and capacitance reduce driver losses.
- Wettable Flank Option: The NVMFS5C404NWFAFT1G includes a wettable flank option for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive applications with AEC-Q101 qualification and PPAP capability.
- Pb-Free and RoHS Compliant: Ensures compliance with environmental regulations.
Applications
- Power Management: Ideal for power management in various applications, including DC-DC converters, power supplies, and voltage regulators.
- Automotive Systems: Suitable for automotive systems due to its AEC-Q101 qualification and robust thermal performance.
- Industrial Power Systems: Used in industrial power systems for motor control, power factor correction, and other high-power applications.
- Consumer Electronics: Applicable in consumer electronics for power switching and management in devices such as laptops, smartphones, and other portable electronics.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C404NWFAFT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the typical on-resistance of the NVMFS5C404NWFAFT1G?
The typical on-resistance (RDS(on)) is 0.7 mΩ at VGS = 10 V and ID = 50 A.
- What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) at 25°C is 378 A.
- Is the NVMFS5C404NWFAFT1G AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RθJC) is 0.75 °C/W.
- Is the device Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175 °C.
- What is the typical gate threshold voltage?
The typical gate threshold voltage (VGS(TH)) is between 2.0 and 4.0 V.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation (PD) at 25°C is 200 W.
- What package options are available for the NVMFS5C404NWFAFT1G?
The device is available in DFN5 and DFNW5 packages.
