NVMFS5A160PLZT1G
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onsemi NVMFS5A160PLZT1G

Manufacturer No:
NVMFS5A160PLZT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 15A/100A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5A160PLZT1G is a single P-Channel Power MOSFET produced by onsemi, designed to meet the stringent requirements of high-performance power management applications. This MOSFET features a compact 5 x 6 mm footprint, making it ideal for space-constrained designs. It is part of the PowerTrench® family, known for its high efficiency and power density. The device is AEC-Q101 qualified and PPAP capable, ensuring reliability and robustness in automotive and other demanding environments.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) -60 V
Gate to Source Voltage (Vgs) ±20 V
Continuous Drain Current (Id) -100 A
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) W
Operating Temperature -55°C ~ 175°C (TJ) °C
Package 8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs 7.7mΩ @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V nC
Input Capacitance (Ciss) (Max) @ Vds 7700 pF @ 20 V pF
Technology MOSFET (Metal Oxide)
FET Type P-Channel

Key Features

  • Miniaturized Footprint: The MOSFET has a compact size of 5 x 6 mm, making it suitable for space-constrained applications.
  • Low Rds On: It offers improved power efficiency with a low on-resistance of 7.7mΩ at 50A and 10V.
  • Automotive-Grade Reliability: AEC-Q101 qualified and PPAP capable, ensuring reliability and robustness in automotive and other demanding environments.
  • Wettable Flank Option: Enhances optical inspection capabilities, guaranteeing precision and quality in production.
  • Epoxy-Free Construction and Surface-Mount Technology: Ensures reliability and ease of mounting.
  • High Thermal Performance: Capable of operating efficiently in challenging environments with a junction temperature range of -55°C to 175°C.

Applications

  • Overvoltage Protection: Used in electronic circuits to protect against overvoltage conditions.
  • Short Circuit Detection: Integrated diagnostic capabilities help detect and manage short circuits.
  • High-Efficiency Conversion: Suitable for power-efficient designs in various electronic systems.
  • Automotive Systems: Ideal for safety-critical systems in the automotive industry due to its high reliability and robustness.

Q & A

  1. Q: What is the maximum voltage rating for the NVMFS5A160PLZT1G?
    A: The NVMFS5A160PLZT1G has a maximum drain-source voltage rating of -60 V.
  2. Q: Is the NVMFS5A160PLZT1G suitable for high-power applications?
    A: Yes, the low on-resistance and high voltage capability make the NVMFS5A160PLZT1G ideal for high-power applications requiring efficient power management.
  3. Q: What is the operating temperature range of the NVMFS5A160PLZT1G?
    A: The operating temperature range is -55°C to 175°C (TJ).
  4. Q: What is the package type of the NVMFS5A160PLZT1G?
    A: The package type is 8-PowerTDFN, 5 Leads.
  5. Q: Is the NVMFS5A160PLZT1G AEC-Q101 qualified?
    A: Yes, the NVMFS5A160PLZT1G is AEC-Q101 qualified and PPAP capable.
  6. Q: What is the typical input capacitance of the NVMFS5A160PLZT1G?
    A: The typical input capacitance (Ciss) is 7700 pF at 20 V.
  7. Q: What is the gate charge (Qg) of the NVMFS5A160PLZT1G?
    A: The gate charge (Qg) is 160 nC at 10 V.
  8. Q: Is the NVMFS5A160PLZT1G RoHS compliant?
    A: Yes, the NVMFS5A160PLZT1G is RoHS compliant and Pb-free.
  9. Q: What are the typical applications of the NVMFS5A160PLZT1G?
    A: Typical applications include overvoltage protection, short circuit detection, and high-efficiency conversion in electronic systems, particularly in the automotive industry.
  10. Q: What is the maximum power dissipation of the NVMFS5A160PLZT1G?
    A: The maximum power dissipation is 3.8W (Ta) and 200W (Tc).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7700 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Same Series
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NVMFS5A160PLZWFT3G
MOSFET P-CH 60V 15A/100A 5DFN
NVMFS5A160PLZT1G
NVMFS5A160PLZT1G
MOSFET P-CH 60V 15A/100A 5DFN

Similar Products

Part Number NVMFS5A160PLZT1G NVMFS5A160PLZT3G NVMFS5A140PLZT1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 40 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 100A (Tc) 15A (Ta), 100A (Tc) 20A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.7mOhm @ 50A, 10V 7.7mOhm @ 50A, 10V 4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 160 nC @ 10 V 136 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7700 pF @ 20 V 7700 pF @ 20 V 7400 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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