Overview
The NVMFS5A140PLZT1G is a high-performance P-Channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. The MOSFET features a compact DFN5 5x6, 1.27P (SO-8FL) package, making it ideal for space-constrained designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and suitability for automotive and other demanding environments. The device is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | -40 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | -140 | A |
| Continuous Drain Current (ID) at TA = 25°C | -20 | A |
| Power Dissipation (PD) at RθJC | 200 | W |
| Power Dissipation (PD) at RθJA | 3.8 | W |
| Pulsed Drain Current (IDP) | -560 | A |
| Operating Junction and Storage Temperature (TJ, TSTG) | -55 to +175 | °C |
| Source Current (Body Diode) (IS) | -140 | A |
| Single Pulse Drain to Source Avalanche Energy (EAS) | 420 | mJ |
| Lead Temperature for Soldering Purposes | 260 | °C |
| On-Resistance (RDS(on)) at VGS = -10 V, ID = -50 A | 3.2 - 4.2 | mΩ |
| Junction to Case Thermal Resistance (RθJC) | 0.75 | °C/W |
| Junction to Ambient Thermal Resistance (RθJA) | 39 | °C/W |
Key Features
- Compact Design: Small footprint of 5 x 6 mm in a DFN5 package, ideal for space-constrained applications.
- Low On-Resistance: Minimizes conduction losses with RDS(on) as low as 3.2 mΩ at VGS = -10 V and ID = -50 A.
- Wettable Flank Option: Available in a wettable flank version (NVMFS5A140PLZWF) for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and suitability for automotive and other demanding environments.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Ideal for power management in high-current applications such as DC-DC converters, motor control, and power supplies.
- Industrial Control: Used in industrial control systems, robotics, and other high-reliability industrial applications.
- Consumer Electronics: Applicable in consumer electronics requiring high current handling and low on-resistance.
Q & A
- What is the maximum drain to source voltage (VDSS) of the NVMFS5A140PLZT1G?
The maximum drain to source voltage (VDSS) is -40 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is -140 A.
- What is the on-resistance (RDS(on)) at VGS = -10 V and ID = -50 A?
The on-resistance (RDS(on)) at VGS = -10 V and ID = -50 A is between 3.2 mΩ and 4.2 mΩ.
- Is the NVMFS5A140PLZT1G Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the junction to case thermal resistance (RθJC) of the device?
The junction to case thermal resistance (RθJC) is 0.75 °C/W.
- What are the operating junction and storage temperatures (TJ, TSTG) for this MOSFET?
The operating junction and storage temperatures (TJ, TSTG) range from -55°C to +175°C.
- Is the NVMFS5A140PLZT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What is the maximum pulsed drain current (IDP) for this device?
The maximum pulsed drain current (IDP) is -560 A.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- What package type does the NVMFS5A140PLZT1G come in?
The device comes in a DFN5 5x6, 1.27P (SO-8FL) package.
