Overview
The NVMFS5113PLWFT1G is a power MOSFET from onsemi, designed for high-performance applications. This single P-channel MOSFET is part of the NVMFS5113PL series and is packaged in a DFN5 (DFNW5) case. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V |
| Gate-to-Source Voltage | VGS | −20 | V |
| Continuous Drain Current (RJC, TC = 25°C) | ID | −64 A | A |
| Continuous Drain Current (RJA, TA = 25°C) | ID | −10 A | A |
| Power Dissipation (RJC, TC = 25°C) | PD | 150 W | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 µs) | IDM | −415 A | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to 175 °C | °C |
| Drain-to-Source On Resistance (VGS = -10 V, ID = -17 A) | RDS(on) | 10.5 - 14 mΩ | mΩ |
| Gate Threshold Voltage | VGS(TH) | −1.5 to -2.5 V | V |
| Junction-to-Case Thermal Resistance | RJC | 1.0 °C/W | °C/W |
| Junction-to-Ambient Thermal Resistance | RJA | 39 °C/W | °C/W |
Key Features
- Low RDS(on) to minimize conduction losses
- High current capability with a continuous drain current of up to -64 A
- Avalanche energy specified for robust performance under stress conditions
- Wettable flanks product (NVMFS5113PLWF) for improved soldering and inspection
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications
- Pb-free, halogen-free, and RoHS compliant
Applications
The NVMFS5113PLWFT1G is designed for various high-performance applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for automotive power management and control systems.
- Industrial power supplies: Its high current capability and low RDS(on) make it ideal for industrial power supply applications.
- Motor control: It can be used in motor control circuits where high current and low resistance are critical.
- Power management: Suitable for power management in consumer electronics, servers, and other high-power devices.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5113PLWFT1G?
The maximum drain-to-source voltage (VDSS) is -60 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is -64 A.
- Is the NVMFS5113PLWFT1G RoHS compliant?
Yes, the device is Pb-free, halogen-free, and RoHS compliant.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is -1.5 to -2.5 V.
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RJC) is 1.0 °C/W.
- What are the typical applications of the NVMFS5113PLWFT1G?
Typical applications include automotive systems, industrial power supplies, motor control, and power management in consumer electronics.
- Is the NVMFS5113PLWFT1G AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) at 25°C and tp = 10 µs is -415 A.
- What is the operating junction temperature range?
The operating junction temperature range (TJ) is -55 to 175 °C.
- What is the typical on-resistance at VGS = -10 V and ID = -17 A?
The typical on-resistance (RDS(on)) at VGS = -10 V and ID = -17 A is 10.5 to 14 mΩ.
