NVMFS5113PLT1G
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onsemi NVMFS5113PLT1G

Manufacturer No:
NVMFS5113PLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 10A/64A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5113PLT1G is a high-performance P-Channel Power MOSFET manufactured by onsemi. This device is designed for automotive applications and complies with the AEC-Q101 standard, ensuring reliability and durability in demanding environments. The MOSFET features a compact 5-pin SO-FL EP package, making it suitable for surface mount applications. It is known for its low on-resistance and high current handling capabilities, making it an ideal choice for various power management and switching applications.

Key Specifications

ParameterValue
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current10 A (Note: Peak current can be higher, up to 64 A under specific conditions)
Maximum Gate Source Voltage (V)±20 V
Maximum Gate Threshold Voltage (V)2.5 V
On-Resistance (Rds(on))14 mΩ @ 10 V, 17 A
Package Type5-pin SO-FL EP (DFN 5x6)
Power Dissipation (Ta)3.8 W
Power Dissipation (Tc)150 W
Operating Temperature Range-55°C to 175°C

Key Features

  • Low on-resistance (Rds(on)) of 14 mΩ @ 10 V, 17 A, ensuring efficient power handling.
  • High continuous drain current of 10 A, with peak current capabilities up to 64 A under specific conditions.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Compact 5-pin SO-FL EP package (DFN 5x6) for surface mount applications.
  • Wide operating temperature range from -55°C to 175°C.

Applications

The NVMFS5113PLT1G is designed for use in various automotive and industrial applications, including but not limited to:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Battery management systems.
  • Other high-reliability power electronics.

Q & A

  1. What is the maximum drain-source breakdown voltage of the NVMFS5113PLT1G?
    The maximum drain-source breakdown voltage is 60 V.
  2. What is the continuous drain current rating of the NVMFS5113PLT1G?
    The continuous drain current rating is 10 A.
  3. What is the on-resistance (Rds(on)) of the NVMFS5113PLT1G?
    The on-resistance is 14 mΩ @ 10 V, 17 A.
  4. Is the NVMFS5113PLT1G AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
  5. What is the operating temperature range of the NVMFS5113PLT1G?
    The operating temperature range is from -55°C to 175°C.
  6. What is the package type of the NVMFS5113PLT1G?
    The package type is 5-pin SO-FL EP (DFN 5x6).
  7. What are the power dissipation ratings for the NVMFS5113PLT1G?
    The power dissipation ratings are 3.8 W (Ta) and 150 W (Tc).
  8. Can the NVMFS5113PLT1G handle high peak currents?
    Yes, it can handle peak currents up to 64 A under specific conditions.
  9. What are some common applications for the NVMFS5113PLT1G?
    Common applications include power management, DC-DC converters, motor control, and battery management systems.
  10. Is the NVMFS5113PLT1G suitable for surface mount applications?
    Yes, it is designed for surface mount applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:83 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Same Series
NVMFS5113PLT1G
NVMFS5113PLT1G
MOSFET P-CH 60V 10A/64A 5DFN

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