Overview
The NVMFS015N10MCLT1G is a power MOSFET from onsemi, designed for high-performance applications. This single N-channel MOSFET features a drain-to-source voltage (VDSS) of 100 V and a continuous drain current (ID) of up to 47.1 A at 25°C. It is housed in a compact DFN5 package, measuring 5x6 mm, which is ideal for space-constrained designs. The device is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, making it suitable for a wide range of applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 47.1 | A |
| Continuous Drain Current (TC = 100°C) | ID | 29.8 | A |
| Power Dissipation (TC = 25°C) | PD | 59.5 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 259 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 14 A) | RDS(on) | 9.7 - 12.2 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1 - 3 | V |
| Total Gate Charge (VGS = 10 V, VDS = 50 V, ID = 14 A) | QG(TOT) | 19 | nC |
Key Features
- Compact Design: Small footprint (5x6 mm) in DFN5 package, ideal for space-constrained applications.
- Low RDS(on): Minimizes conduction losses with RDS(on) as low as 9.7 mΩ at VGS = 10 V.
- Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
- Wettable Flank Option: Available in DFNW5 package with wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Ideal for power management in high-current applications such as DC-DC converters and motor control.
- Industrial Control: Used in industrial control systems, including power supplies and motor drives.
- Consumer Electronics: Applicable in consumer electronics requiring high power efficiency and compact design.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS015N10MCLT1G?
The maximum drain-to-source voltage (VDSS) is 100 V.
- What is the continuous drain current at 25°C?
The continuous drain current (ID) at 25°C is 47.1 A.
- What is the typical on-resistance at VGS = 10 V and ID = 14 A?
The typical on-resistance (RDS(on)) is 12.2 mΩ.
- Is the NVMFS015N10MCLT1G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the operating junction temperature range?
The operating junction temperature range is −55 to +175°C.
- What is the total gate charge at VGS = 10 V and VDS = 50 V?
The total gate charge (QG(TOT)) is 19 nC.
- Is the device Pb-free and RoHS compliant?
Yes, the device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the package type of the NVMFS015N10MCLT1G?
The device is available in DFN5 and DFNW5 packages.
- What are the typical applications of the NVMFS015N10MCLT1G?
It is suitable for automotive systems, power management, industrial control, and consumer electronics.
- What is the maximum pulsed drain current at 25°C?
The maximum pulsed drain current (IDM) at 25°C is 259 A for a pulse width of 10 μs.
