Overview
The NVGS4111PT1G is a single P-channel power MOSFET produced by onsemi, designed for high-performance applications. This device utilizes onsemi's leading -30 V Trench process, which ensures low RDS(on) and improved efficiency. The MOSFET is packaged in a surface mount TSOP-6 package, making it suitable for portable and space-constrained applications. It is also AEC-Q101 qualified and PPAP capable, making it ideal for automotive and other demanding environments.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | -3.7 A | A |
| Continuous Drain Current (TA = 85°C) | ID | -2.7 A | A |
| Pulsed Drain Current | IDM | -15 A | A |
| Power Dissipation (TA = 25°C) | PD | 1.25 W | W |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150°C | °C |
| Source Current (Body Diode) | IS | -1.7 A | A |
| Lead Temperature for Soldering Purposes | TL | 260°C | °C |
| Gate Threshold Voltage | VGS(TH) | -1.0 to -3.0 V | V |
| Drain-to-Source On Resistance | RDS(on) | 38 to 60 mΩ (VGS = -10 V, ID = -3.7 A) | mΩ |
Key Features
- Leading -30 V Trench process for low RDS(on)
- Low profile TSOP-6 package suitable for portable applications
- Surface mount package saves board space
- Improved efficiency for battery applications
- AEC-Q101 qualified and PPAP capable for automotive and other demanding applications
- Pb-Free package available
Applications
- Battery management and switching
- Load switching
- Battery protection
Q & A
- What is the maximum drain-to-source voltage of the NVGS4111PT1G? The maximum drain-to-source voltage is -30 V.
- What is the continuous drain current at 25°C? The continuous drain current at 25°C is -3.7 A.
- What is the operating junction and storage temperature range? The operating junction and storage temperature range is -55 to 150°C.
- Is the NVGS4111PT1G AEC-Q101 qualified? Yes, the NVGS4111PT1G is AEC-Q101 qualified and PPAP capable.
- What is the typical on-resistance of the MOSFET? The typical on-resistance is 38 to 60 mΩ at VGS = -10 V and ID = -3.7 A.
- What are the common applications of the NVGS4111PT1G? Common applications include battery management and switching, load switching, and battery protection.
- What is the package type of the NVGS4111PT1G? The package type is TSOP-6.
- Is the NVGS4111PT1G Pb-Free? Yes, the NVGS4111PT1G is available in a Pb-Free package.
- What is the maximum power dissipation at 25°C? The maximum power dissipation at 25°C is 1.25 W.
- What is the gate threshold voltage range? The gate threshold voltage range is -1.0 to -3.0 V.
