Overview
The NTZS3151PT1G is a P-Channel, small signal MOSFET produced by onsemi. This device is designed for low-power applications and is known for its compact SOT-563 package, measuring 1.6 x 1.6 mm. It is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic devices. The MOSFET features low RDS(on) and low threshold voltage, enhancing system efficiency and reducing power consumption.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V |
| Gate-to-Source Voltage | VGS | ±8.0 | V |
| Continuous Drain Current (TA = 25°C) | ID | -860 | mA |
| Pulsed Drain Current (t ≤ 5 s, TA = 25°C) | ID | -950 | mA |
| Power Dissipation (Steady State) | PD | 170 | mW |
| Power Dissipation (t ≤ 5 s) | PD | 210 | mW |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
| Drain-to-Source On Resistance (VGS = -4.5 V, ID = -950 mA) | RDS(on) | 120-150 | mΩ |
| Gate Threshold Voltage | VGS(TH) | -0.45 to -1.0 | V |
Key Features
- Low RDS(on) improving system efficiency
- Low threshold voltage
- Small footprint in SOT-563 package (1.6 x 1.6 mm)
- Pb-free, halogen-free, and RoHS compliant
- High continuous and pulsed drain current capabilities
- Low power dissipation
- Wide operating junction and storage temperature range (-55°C to 150°C)
Applications
- Load/Power Switches
- Battery Management
- Cell Phones, Digital Cameras, PDAs, Pagers, etc.
Q & A
- What is the maximum drain-to-source voltage of the NTZS3151PT1G?
The maximum drain-to-source voltage (VDSS) is -20 V.
- What is the continuous drain current at 25°C?
The continuous drain current (ID) at 25°C is -860 mA.
- What is the pulsed drain current for a pulse duration of 5 seconds at 25°C?
The pulsed drain current (ID) for a pulse duration of 5 seconds at 25°C is -950 mA.
- What is the power dissipation in steady state and for a pulse duration of 5 seconds?
The power dissipation in steady state is 170 mW, and for a pulse duration of 5 seconds, it is 210 mW.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55°C to 150°C.
- What is the typical drain-to-source on resistance at VGS = -4.5 V and ID = -950 mA?
The typical drain-to-source on resistance (RDS(on)) at VGS = -4.5 V and ID = -950 mA is 120-150 mΩ.
- What are the typical applications of the NTZS3151PT1G?
The typical applications include load/power switches, battery management, and use in cell phones, digital cameras, PDAs, pagers, etc.
- Is the NTZS3151PT1G RoHS compliant?
Yes, the NTZS3151PT1G is Pb-free, halogen-free, and RoHS compliant.
- What is the package type of the NTZS3151PT1G?
The package type is SOT-563.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is -0.45 to -1.0 V.
