Overview
The NTTFS5C670NLTAG is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed to operate at a drain-source breakdown voltage of 60 V and is capable of handling high current levels, making it suitable for various power management applications. The MOSFET features a low on-resistance (RDS(on)) and is packaged in an 8-WDFN (3.3x3.3 mm) surface mount package, which is compact and efficient for modern electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Breakdown Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta | 16 A |
| Continuous Drain Current (ID) at Tc | 70 A |
| Power Dissipation (PD) at Ta | 3.2 W |
| Power Dissipation (PD) at Tc | 63 W |
| On-Resistance (RDS(on)) at VGS = 10 V | 6.1 mΩ |
| Gate Threshold Voltage (VGS(th)) | ±20 V |
| Package Type | 8-WDFN (3.3x3.3 mm) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
Key Features
- Low on-resistance (RDS(on)) of 6.1 mΩ at VGS = 10 V, ensuring minimal power loss.
- High continuous drain current capability of up to 70 A at Tc.
- Compact 8-WDFN (3.3x3.3 mm) surface mount package for efficient use of board space.
- RoHS compliant, making it suitable for use in environmentally friendly designs.
- Low input capacitance and gate threshold voltage, enhancing switching performance.
Applications
- High-performance DC-DC converters where high efficiency and low power loss are critical.
- Point of Load (POL) modules requiring high current handling and compact packaging.
- Netcom and Telecom server applications where reliable and efficient power management is essential.
Q & A
- What is the drain-source breakdown voltage of the NTTFS5C670NLTAG MOSFET?
The drain-source breakdown voltage is 60 V.
- What is the maximum continuous drain current at Ta and Tc?
The maximum continuous drain current is 16 A at Ta and 70 A at Tc.
- What is the on-resistance (RDS(on)) at VGS = 10 V?
The on-resistance is 6.1 mΩ at VGS = 10 V.
- What is the package type of the NTTFS5C670NLTAG MOSFET?
The package type is 8-WDFN (3.3x3.3 mm).
- Is the NTTFS5C670NLTAG MOSFET RoHS compliant?
Yes, the NTTFS5C670NLTAG MOSFET is RoHS compliant.
- What are some typical applications of the NTTFS5C670NLTAG MOSFET?
Typical applications include high-performance DC-DC converters, Point of Load modules, and Netcom/Telecom server applications.
- What is the gate threshold voltage range of the NTTFS5C670NLTAG MOSFET?
The gate threshold voltage range is ±20 V.
- How many channels does the NTTFS5C670NLTAG MOSFET have?
The NTTFS5C670NLTAG MOSFET has 1 channel.
- What is the power dissipation capability at Ta and Tc?
The power dissipation capability is 3.2 W at Ta and 63 W at Tc.
- Is the NTTFS5C670NLTAG MOSFET suitable for high-frequency switching applications?
Yes, due to its low on-resistance and low input capacitance, it is suitable for high-frequency switching applications.
