NTTFS5C673NLTAG
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onsemi NTTFS5C673NLTAG

Manufacturer No:
NTTFS5C673NLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 13A/50A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTTFS5C673NLTAG is a high-performance power MOSFET produced by onsemi. This single N-Channel MOSFET is designed for applications requiring low on-resistance and high current handling capabilities. With a compact 8-WDFN (3.3x3.3 mm) package, it is ideal for space-constrained designs. The device is Pb-free, halogen-free, and BFR-free, ensuring compliance with RoHS standards. It features a low RDS(on) to minimize conduction losses and low QG and capacitance to reduce driver losses, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Symbol Value Unit
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 50 A
Continuous Drain Current (TC = 100°C) ID 35 A
Power Dissipation (TC = 25°C) PD 46 W
Power Dissipation (TC = 100°C) PD 23 W
Maximum Junction Temperature TJ 175 °C
Minimum Junction Temperature TJ -55 °C
Maximum Pulse Drain Current ID 290 A
Drain to Source On Resistance (RDS(on)) @ 10V RDS(on) 9.3 mΩ
Gate Threshold Voltage VGS(TH) 1.2 - 2.0 V
Total Gate Charge QG(TOT) 9.5 nC nC
Input Capacitance CISS 880 pF pF
Package Type 8-WDFN (3.3x3.3 mm)

Key Features

  • Compact Design: Small footprint (3.3x3.3 mm) for space-constrained applications.
  • Low On-Resistance: Minimizes conduction losses with an RDS(on) of 9.3 mΩ @ 10V.
  • Low QG and Capacitance: Reduces driver losses, enhancing overall efficiency.
  • Environmental Compliance: Pb-free, halogen-free, and BFR-free, ensuring RoHS compliance.
  • High Current Handling: Capable of handling continuous drain currents up to 50 A at TC = 25°C.

Applications

  • Power Management: Suitable for DC-DC converters, power supplies, and voltage regulators.
  • Switching Applications: Ideal for motor control, battery management, and other high-frequency switching applications.
  • Automotive Systems: Can be used in automotive power systems due to its robust thermal and electrical characteristics.
  • Industrial Control: Applicable in industrial control systems, such as motor drives and power inverters.

Q & A

  1. What is the maximum drain to source voltage of the NTTFS5C673NLTAG MOSFET?

    The maximum drain to source voltage (VDSS) is 60 V.

  2. What is the continuous drain current rating at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 50 A.

  3. What is the maximum junction temperature for this MOSFET?

    The maximum junction temperature (TJ) is 175°C.

  4. What is the typical on-resistance (RDS(on)) at VGS = 10V?

    The typical on-resistance (RDS(on)) at VGS = 10V is 9.3 mΩ.

  5. Is the NTTFS5C673NLTAG MOSFET RoHS compliant?

    Yes, the device is Pb-free, halogen-free, and BFR-free, ensuring RoHS compliance.

  6. What is the package type and dimensions of the NTTFS5C673NLTAG?

    The package type is 8-WDFN with dimensions of 3.3x3.3 mm.

  7. What is the maximum pulse drain current rating?

    The maximum pulse drain current is 290 A.

  8. What are the typical gate threshold voltage ranges?

    The gate threshold voltage (VGS(TH)) ranges from 1.2 V to 2.0 V.

  9. What is the input capacitance of the MOSFET?

    The input capacitance (CISS) is 880 pF.

  10. What are some common applications for the NTTFS5C673NLTAG MOSFET?

    Common applications include power management, switching applications, automotive systems, and industrial control systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 46W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NTTFS5C673NLTWG
NTTFS5C673NLTWG
MOSFET N-CH 60V 13A/50A 8WDFN

Similar Products

Part Number NTTFS5C673NLTAG NTTFS5C673NLTWG NTTFS5C670NLTAG
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 50A (Tc) 13A (Ta), 50A (Tc) 16A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.3mOhm @ 25A, 10V 9.3mOhm @ 25A, 10V 6.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V 9.5 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V 880 pF @ 25 V 1400 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 46W (Tc) 3.1W (Ta), 46W (Tc) 3.2W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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