Overview
The NTTFS5C673NLTAG is a high-performance power MOSFET produced by onsemi. This single N-Channel MOSFET is designed for applications requiring low on-resistance and high current handling capabilities. With a compact 8-WDFN (3.3x3.3 mm) package, it is ideal for space-constrained designs. The device is Pb-free, halogen-free, and BFR-free, ensuring compliance with RoHS standards. It features a low RDS(on) to minimize conduction losses and low QG and capacitance to reduce driver losses, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain to Source Voltage | VDSS | 60 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 50 | A |
| Continuous Drain Current (TC = 100°C) | ID | 35 | A |
| Power Dissipation (TC = 25°C) | PD | 46 | W |
| Power Dissipation (TC = 100°C) | PD | 23 | W |
| Maximum Junction Temperature | TJ | 175 | °C |
| Minimum Junction Temperature | TJ | -55 | °C |
| Maximum Pulse Drain Current | ID | 290 | A |
| Drain to Source On Resistance (RDS(on)) @ 10V | RDS(on) | 9.3 mΩ | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Total Gate Charge | QG(TOT) | 9.5 nC | nC |
| Input Capacitance | CISS | 880 pF | pF |
| Package Type | 8-WDFN (3.3x3.3 mm) |
Key Features
- Compact Design: Small footprint (3.3x3.3 mm) for space-constrained applications.
- Low On-Resistance: Minimizes conduction losses with an RDS(on) of 9.3 mΩ @ 10V.
- Low QG and Capacitance: Reduces driver losses, enhancing overall efficiency.
- Environmental Compliance: Pb-free, halogen-free, and BFR-free, ensuring RoHS compliance.
- High Current Handling: Capable of handling continuous drain currents up to 50 A at TC = 25°C.
Applications
- Power Management: Suitable for DC-DC converters, power supplies, and voltage regulators.
- Switching Applications: Ideal for motor control, battery management, and other high-frequency switching applications.
- Automotive Systems: Can be used in automotive power systems due to its robust thermal and electrical characteristics.
- Industrial Control: Applicable in industrial control systems, such as motor drives and power inverters.
Q & A
- What is the maximum drain to source voltage of the NTTFS5C673NLTAG MOSFET?
The maximum drain to source voltage (VDSS) is 60 V.
- What is the continuous drain current rating at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 50 A.
- What is the maximum junction temperature for this MOSFET?
The maximum junction temperature (TJ) is 175°C.
- What is the typical on-resistance (RDS(on)) at VGS = 10V?
The typical on-resistance (RDS(on)) at VGS = 10V is 9.3 mΩ.
- Is the NTTFS5C673NLTAG MOSFET RoHS compliant?
Yes, the device is Pb-free, halogen-free, and BFR-free, ensuring RoHS compliance.
- What is the package type and dimensions of the NTTFS5C673NLTAG?
The package type is 8-WDFN with dimensions of 3.3x3.3 mm.
- What is the maximum pulse drain current rating?
The maximum pulse drain current is 290 A.
- What are the typical gate threshold voltage ranges?
The gate threshold voltage (VGS(TH)) ranges from 1.2 V to 2.0 V.
- What is the input capacitance of the MOSFET?
The input capacitance (CISS) is 880 pF.
- What are some common applications for the NTTFS5C673NLTAG MOSFET?
Common applications include power management, switching applications, automotive systems, and industrial control systems.
