NTTFS4C13NTAG
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onsemi NTTFS4C13NTAG

Manufacturer No:
NTTFS4C13NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 7.2A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTTFS4C13NTAG is a power MOSFET transistor manufactured by onsemi. This single N-channel MOSFET is designed to provide high performance and reliability in various power management applications. It features a compact WDFN8 package, which is lead-free and suitable for surface mount technology (SMT) assembly. The device is known for its low on-state resistance and high current handling capabilities, making it an ideal choice for demanding power electronics applications.

Key Specifications

ParameterValue
Voltage (Vds)30 V
On-State Resistance (Rds(on))9.4 mΩ
Continuous Drain Current (Id)38 A
Package TypeWDFN8 (Pb-Free)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-state resistance of 9.4 mΩ, reducing power losses and improving efficiency.
  • High continuous drain current of 38 A, suitable for high-power applications.
  • Compact WDFN8 package, ideal for space-constrained designs.
  • Lead-free and RoHS compliant, ensuring environmental sustainability.
  • Wide operating temperature range from -55°C to 150°C, enhancing reliability in diverse environments.

Applications

The NTTFS4C13NTAG power MOSFET is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive electronics, such as battery management and power steering.
  • Industrial control systems and automation.
  • Consumer electronics requiring high power efficiency.

Q & A

  1. What is the maximum voltage rating of the NTTFS4C13NTAG MOSFET?
    The maximum voltage rating is 30 V.
  2. What is the on-state resistance of the NTTFS4C13NTAG?
    The on-state resistance is 9.4 mΩ.
  3. What is the continuous drain current of the NTTFS4C13NTAG?
    The continuous drain current is 38 A.
  4. What package type does the NTTFS4C13NTAG come in?
    The NTTFS4C13NTAG comes in a WDFN8 package.
  5. Is the NTTFS4C13NTAG lead-free and RoHS compliant?
    Yes, the NTTFS4C13NTAG is lead-free and RoHS compliant.
  6. What is the operating temperature range of the NTTFS4C13NTAG?
    The operating temperature range is from -55°C to 150°C.
  7. Where can I find the datasheet for the NTTFS4C13NTAG?
    You can find the datasheet on the onsemi official website or through distributors like Digi-Key and Mouser.
  8. What are some common applications for the NTTFS4C13NTAG?
    Common applications include power supplies, motor control systems, automotive electronics, industrial control systems, and consumer electronics.
  9. How do I ensure proper thermal management for the NTTFS4C13NTAG?
    Proper thermal management can be achieved by using a suitable heat sink and ensuring good thermal interface material between the device and the heat sink.
  10. Can the NTTFS4C13NTAG be used in high-frequency applications?
    Yes, the NTTFS4C13NTAG can be used in high-frequency applications due to its low on-state resistance and fast switching times.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:770 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):780mW (Ta), 21.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NTTFS4C13NTWG
NTTFS4C13NTWG
MOSFET N-CH 30V 7.2A 8WDFN

Similar Products

Part Number NTTFS4C13NTAG NTTFS4C53NTAG NTTFS4C13NTWG NTTFS4C10NTAG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Active
FET Type N-Channel - N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V - 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta) - 7.2A (Ta) 8.2A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 30A, 10V - 9.4mOhm @ 30A, 10V 7.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA - 2.1V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 4.5 V - 7.8 nC @ 4.5 V 18.6 nC @ 10 V
Vgs (Max) ±20V - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 15 V - 770 pF @ 15 V 993 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 780mW (Ta), 21.5W (Tc) - 780mW (Ta), 21.5W (Tc) 790mW (Ta), 23.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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