Overview
The NTTFS4C10NTAG is a high-performance, single N-Channel MOSFET produced by onsemi. This device is designed to operate in a variety of power management applications, offering low conduction losses, minimal driver losses, and optimized switching characteristics. The MOSFET is housed in a WDFN8 (5x6 mm) package, which is Pb-free, halogen-free, and RoHS compliant. It features a drain-to-source voltage rating of 30 V and a continuous drain current of up to 44 A, making it suitable for demanding power management tasks.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (RJA, TA = 25°C) | ID | 13.3 | A |
| Continuous Drain Current (RJA, TA = 80°C) | ID | 9.9 | A |
| Power Dissipation (RJA, TA = 25°C) | PD | 2.09 | W |
| Pulsed Drain Current (tp = 10 μs, TA = 25°C) | IDM | 128 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +150 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 5.9 - 7.4 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.3 - 2.2 | V |
| Junction-to-Case Thermal Resistance | RJC | 5.3 | °C/W |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free, and RoHS compliant
- High continuous drain current and pulsed drain current capabilities
- Wide operating junction and storage temperature range
- Low gate threshold voltage and low gate-to-source leakage current
Applications
- DC-DC converters
- Power load switches
- Notebook battery management
Q & A
- What is the maximum drain-to-source voltage rating of the NTTFS4C10NTAG MOSFET?
The maximum drain-to-source voltage rating is 30 V.
- What is the continuous drain current rating at 25°C and 80°C?
The continuous drain current is 13.3 A at 25°C and 9.9 A at 80°C.
- What is the power dissipation rating at 25°C?
The power dissipation rating is 2.09 W at 25°C.
- What is the pulsed drain current rating for a pulse width of 10 μs at 25°C?
The pulsed drain current rating is 128 A for a pulse width of 10 μs at 25°C.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is from −55°C to +150°C.
- What is the typical drain-to-source on resistance at VGS = 10 V and ID = 30 A?
The typical drain-to-source on resistance is between 5.9 mΩ and 7.4 mΩ.
- What are the key features of the NTTFS4C10NTAG MOSFET?
The key features include low RDS(on), low capacitance, optimized gate charge, and being Pb-free, halogen-free, and RoHS compliant.
- In what types of applications is the NTTFS4C10NTAG MOSFET typically used?
It is typically used in DC-DC converters, power load switches, and notebook battery management.
- What is the junction-to-case thermal resistance of the NTTFS4C10NTAG MOSFET?
The junction-to-case thermal resistance is 5.3 °C/W.
- Is the NTTFS4C10NTAG MOSFET RoHS compliant?
Yes, the NTTFS4C10NTAG MOSFET is RoHS compliant.
