Overview
The NTMFS4C05N is a power MOSFET from onsemi, designed as a single N-channel device in an SO-8FL package. This MOSFET is optimized for high-performance applications requiring low on-resistance and minimal switching losses. It is RoHS compliant and free from lead, halogen, and brominated flame retardants (BFRs).
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 21.7 | A |
| Continuous Drain Current (TA = 80°C) | ID | 16.3 | A |
| Power Dissipation (TA = 25°C) | PD | 2.57 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 174 | A |
| Operating Junction and Storage Temperature Range | TJ, TSTG | −55 to +150 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 2.7 - 3.4 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.3 - 2.2 | V |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free, and BFR-free; RoHS compliant
- High current capability with a maximum drain current of 78 A
- High pulse current capability up to 174 A
- Low forward diode voltage and fast reverse recovery time
Applications
- CPU power delivery
- DC-DC converters
- High-power switching applications
- Power management in various electronic systems
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4C05N?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C?
The continuous drain current (ID) at 25°C is 21.7 A.
- What is the power dissipation at 25°C?
The power dissipation (PD) at 25°C is 2.57 W.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 174 A.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +150°C.
- What is the typical on-resistance at VGS = 10 V and ID = 30 A?
The typical on-resistance (RDS(on)) is 2.7 - 3.4 mΩ.
- What are the key features of this MOSFET?
The key features include low RDS(on), low capacitance, optimized gate charge, and RoHS compliance.
- What are some common applications for this MOSFET?
Common applications include CPU power delivery, DC-DC converters, and high-power switching applications.
- Is the NTMFS4C05N Pb-free and RoHS compliant?
- What is the maximum gate-to-source voltage?
The maximum gate-to-source voltage (VGS) is ±20 V.
