NTTFS002N04CLTAG
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onsemi NTTFS002N04CLTAG

Manufacturer No:
NTTFS002N04CLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 28A/142A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTTFS002N04CLTAG is a high-performance, single N-Channel power MOSFET produced by ON Semiconductor. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management applications. The MOSFET features a 40V drain-to-source voltage rating, a low on-resistance of 2.2 mΩ, and a high current rating of 142A, making it an excellent choice for high-power DC-DC conversion and other power-intensive applications.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (Vds) 40 V
On-Resistance (Rds(on)) 2.2
Continuous Drain Current (Id) 142 A
Pulse Drain Current (Id(pulse)) 284 A
Gate-to-Source Voltage (Vgs) ±20 V
Operating Junction Temperature (Tj) -55 to 150 °C
Package Type WDFN8 -

Key Features

  • Low on-resistance (Rds(on)) of 2.2 mΩ for reduced power losses.
  • High continuous drain current (Id) of 142A, suitable for high-power applications.
  • 40V drain-to-source voltage rating, providing robust voltage handling.
  • Compact WDFN8 package, offering a small footprint and high power density.
  • Operating junction temperature range of -55°C to 150°C, ensuring reliability in various environments.

Applications

  • High-power DC-DC conversion, including half-bridge and full-bridge topologies.
  • Switched tank capacitor converters and resonant converters.
  • Power supplies for servers, data centers, and other high-power electronic systems.
  • Automotive and industrial power management systems.
  • Synchronous rectification in LLC resonant converters for high efficiency.

Q & A

  1. What is the maximum drain-to-source voltage of the NTTFS002N04CLTAG MOSFET?

    The maximum drain-to-source voltage (Vds) is 40V.

  2. What is the on-resistance (Rds(on)) of the NTTFS002N04CLTAG MOSFET?

    The on-resistance (Rds(on)) is 2.2 mΩ.

  3. What is the continuous drain current (Id) rating of the NTTFS002N04CLTAG MOSFET?

    The continuous drain current (Id) rating is 142A.

  4. What is the package type of the NTTFS002N04CLTAG MOSFET?

    The package type is WDFN8.

  5. What are the typical applications of the NTTFS002N04CLTAG MOSFET?

    Typical applications include high-power DC-DC conversion, switched tank capacitor converters, and synchronous rectification in LLC resonant converters.

  6. What is the operating junction temperature range of the NTTFS002N04CLTAG MOSFET?

    The operating junction temperature range is -55°C to 150°C.

  7. Can the NTTFS002N04CLTAG MOSFET be used in automotive applications?
  8. Is the NTTFS002N04CLTAG MOSFET suitable for high-frequency applications?
  9. What are the benefits of using the NTTFS002N04CLTAG MOSFET in power supplies?

    The benefits include low power losses due to low Rds(on), high current handling, and compact packaging.

  10. Can the NTTFS002N04CLTAG MOSFET be used in data center power supplies?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:28A (Ta), 142A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2940 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 85W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NTTFS002N04CLTAG NTTFS002N04CTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 142A (Tc) 27A (Ta), 136A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 50A, 10V 2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 90µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2940 pF @ 25 V 2250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 85W (Tc) 3.2W (Ta), 85W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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