NTMS4177PR2G
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onsemi NTMS4177PR2G

Manufacturer No:
NTMS4177PR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 6.6A 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The NTMS4177PR2G is a P-Channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in a SOIC-8 surface mount package, which saves board space and is lead-free. It is optimized for low conduction losses, low capacitance, and minimized switching losses, making it suitable for a variety of power management tasks.

Key Specifications

Characteristic Symbol Value Unit
Drain-to-Source Voltage VDSS -30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID -8.9 A
Continuous Drain Current (TA = 70°C) ID -7.1 A
Pulsed Drain Current (tp = 10 μs, TA = 25°C) IDM -46 A
Power Dissipation (TA = 25°C) PD 1.52 W
Operating Junction and Storage Temperature TJ, TSTG -55 to +150 °C
Drain-to-Source On Resistance (VGS = -10 V, ID = -11.4 A) RDS(on) 10-12
Gate Threshold Voltage VGS(TH) -1.5 to -2.5 V

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • SOIC-8 surface mount package saves board space
  • Pb-free device

Applications

  • Load switches
  • Notebook PCs
  • Desktop PCs

Q & A

  1. What is the maximum drain-to-source voltage of the NTMS4177PR2G?

    The maximum drain-to-source voltage (VDSS) is -30 V.

  2. What is the continuous drain current at 25°C?

    The continuous drain current at 25°C is -8.9 A.

  3. What is the pulsed drain current for a pulse width of 10 μs at 25°C?

    The pulsed drain current for a pulse width of 10 μs at 25°C is -46 A.

  4. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to +150 °C.

  5. What is the typical on-resistance at VGS = -10 V and ID = -11.4 A?

    The typical on-resistance at VGS = -10 V and ID = -11.4 A is 10-12 mΩ.

  6. What are the key features of the NTMS4177PR2G?

    The key features include low RDS(on), low capacitance, optimized gate charge, and a Pb-free SOIC-8 package.

  7. What are some common applications of the NTMS4177PR2G?

    Common applications include load switches, notebook PCs, and desktop PCs.

  8. Is the NTMS4177PR2G a Pb-free device?
  9. What is the gate threshold voltage range?

    The gate threshold voltage range is -1.5 to -2.5 V.

  10. What is the maximum power dissipation at 25°C?

    The maximum power dissipation at 25°C is 1.52 W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):840mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

$0.94
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Similar Products

Part Number NTMS4177PR2G NTMS4176PR2G
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Ta) 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 11.4A, 10V 18mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 17 nC @ 4.5 V
Vgs (Max) ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 24 V 1720 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 840mW (Ta) 810mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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