NTMS4176PR2G
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onsemi NTMS4176PR2G

Manufacturer No:
NTMS4176PR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 5.5A 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The NTMS4176PR2G is a P-Channel Power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The NTMS4176PR2G is packaged in an 8-pin SOIC (Small Outline Integrated Circuit) package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-30 V
ID (Continuous Drain Current at Ta=25°C)5.5 A
RDS(ON) (On-Resistance)Typically 24 mΩ at VGS=-10 V, ID=-5.5 A
VGS(th) (Gate Threshold Voltage)Typically -2.5 V
PD (Power Dissipation at Ta=25°C)810 mW
Package8-SOIC

Key Features

  • Low On-Resistance: The NTMS4176PR2G features a low RDS(ON) of typically 24 mΩ, which minimizes power losses and enhances efficiency.
  • High Current Handling: With a continuous drain current of 5.5 A, this MOSFET is suitable for high-current applications.
  • Compact SOIC-8 Package: The 8-pin SOIC package is space-efficient and easy to integrate into various designs.
  • Robust Gate Threshold Voltage: The gate threshold voltage is typically -2.5 V, ensuring reliable switching performance.

Applications

The NTMS4176PR2G is versatile and can be used in a variety of applications, including:

  • Power Management: DC-DC converters, voltage regulators, and power supplies.
  • Switching Applications: Motor control, audio amplifiers, and general-purpose switching.
  • Automotive Systems: Battery management, power steering, and other automotive power systems.
  • Industrial Control: Industrial power supplies, motor drives, and control circuits.

Q & A

  1. What is the maximum drain-source voltage of the NTMS4176PR2G?
    The maximum drain-source voltage (VDS) is -30 V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current (ID) at 25°C is 5.5 A.
  3. What is the typical on-resistance of the NTMS4176PR2G?
    The typical on-resistance (RDS(ON)) is 24 mΩ at VGS=-10 V, ID=-5.5 A.
  4. What is the gate threshold voltage of the NTMS4176PR2G?
    The gate threshold voltage (VGS(th)) is typically -2.5 V.
  5. What is the power dissipation rating at 25°C?
    The power dissipation (PD) at 25°C is 810 mW.
  6. In what package is the NTMS4176PR2G available?
    The NTMS4176PR2G is available in an 8-pin SOIC package.
  7. What are some common applications for the NTMS4176PR2G?
    Common applications include power management, switching applications, automotive systems, and industrial control.
  8. Where can I find detailed specifications for the NTMS4176PR2G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.
  9. What is the significance of low on-resistance in the NTMS4176PR2G?
    Low on-resistance minimizes power losses and enhances efficiency in power management and switching applications.
  10. Is the NTMS4176PR2G suitable for high-current applications?
    Yes, with a continuous drain current of 5.5 A, it is suitable for high-current applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1720 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):810mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number NTMS4176PR2G NTMS4177PR2G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta) 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 9.6A, 10V 12mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 55 nC @ 10 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1720 pF @ 24 V 3100 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 810mW (Ta) 840mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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