NTMS4176PR2G
  • Share:

onsemi NTMS4176PR2G

Manufacturer No:
NTMS4176PR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 5.5A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMS4176PR2G is a P-Channel Power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The NTMS4176PR2G is packaged in an 8-pin SOIC (Small Outline Integrated Circuit) package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-30 V
ID (Continuous Drain Current at Ta=25°C)5.5 A
RDS(ON) (On-Resistance)Typically 24 mΩ at VGS=-10 V, ID=-5.5 A
VGS(th) (Gate Threshold Voltage)Typically -2.5 V
PD (Power Dissipation at Ta=25°C)810 mW
Package8-SOIC

Key Features

  • Low On-Resistance: The NTMS4176PR2G features a low RDS(ON) of typically 24 mΩ, which minimizes power losses and enhances efficiency.
  • High Current Handling: With a continuous drain current of 5.5 A, this MOSFET is suitable for high-current applications.
  • Compact SOIC-8 Package: The 8-pin SOIC package is space-efficient and easy to integrate into various designs.
  • Robust Gate Threshold Voltage: The gate threshold voltage is typically -2.5 V, ensuring reliable switching performance.

Applications

The NTMS4176PR2G is versatile and can be used in a variety of applications, including:

  • Power Management: DC-DC converters, voltage regulators, and power supplies.
  • Switching Applications: Motor control, audio amplifiers, and general-purpose switching.
  • Automotive Systems: Battery management, power steering, and other automotive power systems.
  • Industrial Control: Industrial power supplies, motor drives, and control circuits.

Q & A

  1. What is the maximum drain-source voltage of the NTMS4176PR2G?
    The maximum drain-source voltage (VDS) is -30 V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current (ID) at 25°C is 5.5 A.
  3. What is the typical on-resistance of the NTMS4176PR2G?
    The typical on-resistance (RDS(ON)) is 24 mΩ at VGS=-10 V, ID=-5.5 A.
  4. What is the gate threshold voltage of the NTMS4176PR2G?
    The gate threshold voltage (VGS(th)) is typically -2.5 V.
  5. What is the power dissipation rating at 25°C?
    The power dissipation (PD) at 25°C is 810 mW.
  6. In what package is the NTMS4176PR2G available?
    The NTMS4176PR2G is available in an 8-pin SOIC package.
  7. What are some common applications for the NTMS4176PR2G?
    Common applications include power management, switching applications, automotive systems, and industrial control.
  8. Where can I find detailed specifications for the NTMS4176PR2G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.
  9. What is the significance of low on-resistance in the NTMS4176PR2G?
    Low on-resistance minimizes power losses and enhances efficiency in power management and switching applications.
  10. Is the NTMS4176PR2G suitable for high-current applications?
    Yes, with a continuous drain current of 5.5 A, it is suitable for high-current applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1720 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):810mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
336

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTMS4176PR2G NTMS4177PR2G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta) 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 9.6A, 10V 12mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 55 nC @ 10 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1720 pF @ 24 V 3100 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 810mW (Ta) 840mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L

Related Product By Brand

1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD