Overview
The NTMFS5834NLT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a drain-to-source voltage (VDSS) of 40 V, a continuous drain current (ID) of up to 75 A, and an on-resistance (RDS(on)) as low as 9.3 mΩ at VGS = 10 V. The MOSFET is packaged in a DFN5 (SO-8FL) case, which is Pb-free and RoHS compliant, making it suitable for a wide range of industrial and automotive applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (RJA) at TA = 25°C | ID | 14 | A |
| Continuous Drain Current (RJC) at TC = 25°C | ID | 75 | A |
| Power Dissipation (RJA) at TA = 25°C | PD | 3.6 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 276 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to +175 | °C |
| On-Resistance (RDS(on)) at VGS = 10 V, ID = 20 A | RDS(on) | 9.3 | mΩ |
| Gate Threshold Voltage (VGS(TH)) | VGS(TH) | 1.0 to 3.0 | V |
| Input Capacitance (CISS) | CISS | 1231 | pF |
| Total Gate Charge (QG(TOT)) at VGS = 10 V, VDS = 20 V, ID = 20 A | QG(TOT) | 24 | nC |
Key Features
- Low On-Resistance: The NTMFS5834NLT1G features a low RDS(on) of 9.3 mΩ at VGS = 10 V, making it suitable for high-efficiency applications.
- Low Capacitance: The device has low input, output, and reverse transfer capacitances, which enhance its switching performance.
- Optimized Gate Charge: The total gate charge is optimized for better switching characteristics.
- AEC-Q101 Qualified: The NVMFS5834NL version is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-Free and RoHS Compliant: The device is lead-free and RoHS compliant, ensuring environmental sustainability.
- High Current Handling: The MOSFET can handle continuous drain currents up to 75 A and pulsed currents up to 276 A.
Applications
- Automotive Systems: Suitable for automotive applications due to its AEC-Q101 qualification and robust performance.
- Industrial Power Supplies: Ideal for high-current power supplies, DC-DC converters, and other industrial power management systems.
- Motor Control: Used in motor control circuits for efficient and reliable operation.
- Renewable Energy Systems: Can be used in solar and wind power systems for high-efficiency power conversion.
- Power Tools and Appliances: Suitable for power tools and appliances that require high current handling and low on-resistance.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS5834NLT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 75 A.
- What is the on-resistance (RDS(on)) at VGS = 10 V?
The on-resistance (RDS(on)) at VGS = 10 V is 9.3 mΩ.
- Is the NTMFS5834NLT1G Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the operating junction temperature range?
The operating junction temperature range is −55°C to +175°C.
- What is the total gate charge at VGS = 10 V?
The total gate charge (QG(TOT)) at VGS = 10 V is 24 nC.
- Is the NVMFS5834NL version AEC-Q101 qualified?
Yes, the NVMFS5834NL version is AEC-Q101 qualified and PPAP capable.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 276 A.
- What is the typical forward diode voltage at 25°C?
The typical forward diode voltage (VSD) at 25°C is 0.84 V.
- What is the recommended gate resistance for switching?
The recommended gate resistance (RG) is typically around 0.7 Ω.
