Overview
The NTMFS5834NL, represented by the part number NTMFS5844NLT1G, is a high-performance N-channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance (RDS(on)) and optimized gate charge, making it suitable for a variety of power management and switching applications. The MOSFET is available in a DFN5 (SO-8FL) package and is Pb-free and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (RJA, TA = 25°C) | ID | 14 | A |
| Continuous Drain Current (RJC, TC = 25°C) | ID | 75 | A |
| Power Dissipation (RJA, TA = 25°C) | PD | 3.6 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 276 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 20 A) | RDS(on) | 9.3 mΩ | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.0 to 3.0 | V |
| Junction-to-Case Thermal Resistance | RJC | 1.4 °C/W | °C/W |
Key Features
- Low RDS(on): The NTMFS5834NL features a low on-resistance of 9.3 mΩ at VGS = 10 V and ID = 20 A, ensuring minimal power loss during operation.
- Low Capacitance: This MOSFET has optimized capacitance values, which help in reducing switching losses and improving overall efficiency.
- Optimized Gate Charge: The device has a total gate charge of 24 nC at VGS = 10 V and VDS = 20 V, making it suitable for high-frequency applications.
- AEC-Q101 Qualified: The NVMFS5834NL variant is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free and RoHS Compliant: The device is lead-free and complies with RoHS standards, ensuring environmental sustainability.
Applications
- Power Management: Suitable for DC-DC converters, power supplies, and other power management systems due to its low RDS(on) and high current handling capabilities.
- Automotive Systems: AEC-Q101 qualification makes it ideal for use in automotive applications such as motor control, battery management, and other high-reliability systems.
- Industrial Control: Can be used in industrial control systems, including motor drives, power inverters, and other high-power switching applications.
- Consumer Electronics: Applicable in consumer electronics for power switching and management, such as in laptops, desktops, and other electronic devices.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTMFS5834NL?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current (ID) at TA = 25°C?
The continuous drain current (ID) at TA = 25°C is 14 A.
- What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 20 A?
The typical on-resistance (RDS(on)) is 9.3 mΩ at VGS = 10 V and ID = 20 A.
- Is the NTMFS5834NL Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175 °C.
- What is the gate threshold voltage (VGS(TH)) range?
The gate threshold voltage (VGS(TH)) range is 1.0 to 3.0 V.
- What is the junction-to-case thermal resistance (RJC)?
The junction-to-case thermal resistance (RJC) is 1.4 °C/W.
- Is the NVMFS5834NL variant AEC-Q101 qualified?
Yes, the NVMFS5834NL variant is AEC-Q101 qualified.
- What are some typical applications of the NTMFS5834NL?
Typical applications include power management, automotive systems, industrial control, and consumer electronics.
- What is the total gate charge (QG(TOT)) at VGS = 10 V and VDS = 20 V?
The total gate charge (QG(TOT)) is 24 nC at VGS = 10 V and VDS = 20 V.
