NTMFS5832NLT1G
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onsemi NTMFS5832NLT1G

Manufacturer No:
NTMFS5832NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 20A/111A 5DFN
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NTMFS5832NLT1G is a high-performance N-Channel power MOSFET manufactured by onsemi. This device is designed to offer excellent electrical characteristics, making it suitable for a variety of power management and switching applications. With its robust construction and advanced semiconductor technology, the NTMFS5832NLT1G provides reliable operation in demanding environments.

Key Specifications

ParameterValue
Channel ModeEnhancement
Voltage Rating (Vds)40 V
Current Rating (Id)20 A (Ta), 111 A (Tc)
Power Dissipation (Pd)3.1 W (Ta), 96 W (Tc)
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Package TypeSurface Mount 5-DFN (5x6) (8-SOFL)
On-Resistance (Rds(on))4.2 mΩ

Key Features

  • High current handling capability of up to 111 A at Tc.
  • Low on-resistance of 4.2 mΩ, reducing power losses.
  • Wide operating temperature range from -55°C to +150°C.
  • Compact 5-DFN (5x6) package for space-efficient designs.
  • Enhancement mode operation for precise control.

Applications

The NTMFS5832NLT1G is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power management systems.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the voltage rating of the NTMFS5832NLT1G MOSFET?
    The voltage rating (Vds) of the NTMFS5832NLT1G is 40 V.
  2. What is the current rating of the NTMFS5832NLT1G?
    The current rating (Id) is 20 A at ambient temperature (Ta) and 111 A at case temperature (Tc).
  3. What is the power dissipation of the NTMFS5832NLT1G?
    The power dissipation (Pd) is 3.1 W at ambient temperature (Ta) and 96 W at case temperature (Tc).
  4. What is the on-resistance of the NTMFS5832NLT1G?
    The on-resistance (Rds(on)) is 4.2 mΩ.
  5. What is the operating temperature range of the NTMFS5832NLT1G?
    The operating temperature range is from -55°C to +150°C.
  6. What package type does the NTMFS5832NLT1G come in?
    The NTMFS5832NLT1G comes in a surface mount 5-DFN (5x6) (8-SOFL) package.
  7. What are some common applications for the NTMFS5832NLT1G?
    Common applications include power supplies, motor control systems, high-frequency switching circuits, automotive and industrial power management, and renewable energy systems.
  8. Is the NTMFS5832NLT1G suitable for high-frequency applications?
    Yes, the NTMFS5832NLT1G is suitable for high-frequency switching circuits due to its low on-resistance and high current handling capability.
  9. Can the NTMFS5832NLT1G be used in automotive applications?
    Yes, the NTMFS5832NLT1G can be used in automotive applications due to its robust construction and wide operating temperature range.
  10. Where can I find detailed specifications for the NTMFS5832NLT1G?
    Detailed specifications can be found on the datasheet available from onsemi's official website or through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 111A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS5832NLT1G NTMFS5834NLT1G NTMFS5830NLT1G
Manufacturer onsemi onsemi onsemi
Product Status Last Time Buy Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 111A (Tc) 14A (Ta), 75A (Tc) 28A (Ta), 172A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 20A, 10V 9.3mOhm @ 20A, 10V 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 24 nC @ 10 V 113 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V 1231 pF @ 20 V 5880 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 96W (Tc) 3.6W (Ta), 107W (Tc) 3.2W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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