NTMFS4935NT1G-IRH1
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onsemi NTMFS4935NT1G-IRH1

Manufacturer No:
NTMFS4935NT1G-IRH1
Manufacturer:
onsemi
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Description:
NTMFS4935NT1G-IRH1
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iso14001
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Product Introduction

Overview

The NTMFS4935NT1G-IRH1 is a high-performance N-Channel MOSFET produced by onsemi. Although this product is currently obsolete and no longer manufactured, it was designed to meet the demands of various high-power applications. The MOSFET features a surface mount 5-DFN (5x6) package, making it suitable for compact and efficient designs.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Drain to Source Voltage (Vds)30 V
Maximum Continuous Drain Current (Id)13 A (Ta), 93 A (Tc)
Maximum Drain to Source Resistance (Rds(on))3.2 mOhm @ 30 A, 10 V
Power Dissipation (Pd)930 mW (Ta), 48 W (Tc)
Package TypeSurface Mount 5-DFN (5x6) (8-SOFL)
Life Cycle StatusObsolete

Key Features

  • High-performance N-Channel MOSFET for high-power applications.
  • Low on-resistance (Rds(on)) of 3.2 mOhm @ 30 A, 10 V.
  • Compact surface mount 5-DFN (5x6) package.
  • High maximum continuous drain current of 13 A (Ta) and 93 A (Tc).
  • Suitable for standard MOSFET driver applications.

Applications

The NTMFS4935NT1G-IRH1 was designed for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Automotive and industrial power management systems.

Q & A

  1. What is the maximum drain to source voltage of the NTMFS4935NT1G-IRH1? The maximum drain to source voltage is 30 V.
  2. What is the maximum continuous drain current of the NTMFS4935NT1G-IRH1? The maximum continuous drain current is 13 A (Ta) and 93 A (Tc).
  3. What is the package type of the NTMFS4935NT1G-IRH1? The package type is surface mount 5-DFN (5x6) (8-SOFL).
  4. Is the NTMFS4935NT1G-IRH1 still in production? No, the NTMFS4935NT1G-IRH1 is obsolete and no longer manufactured.
  5. What is the typical on-resistance of the NTMFS4935NT1G-IRH1? The typical on-resistance is 3.2 mOhm @ 30 A, 10 V.
  6. What are some common applications for the NTMFS4935NT1G-IRH1? Common applications include power supplies, motor control systems, high-frequency switching applications, and automotive/industrial power management.
  7. Where can I find the datasheet for the NTMFS4935NT1G-IRH1? You can download the datasheet from official onsemi websites or authorized distributors like Avaq.
  8. What is the power dissipation of the NTMFS4935NT1G-IRH1? The power dissipation is 930 mW (Ta) and 48 W (Tc).
  9. Why is the NTMFS4935NT1G-IRH1 no longer manufactured? The reason for obsolescence is typically due to advancements in technology or market demand shifts, but specific reasons are not provided.
  10. Can I still purchase the NTMFS4935NT1G-IRH1? Although it is obsolete, you may still find it available from some distributors or through secondary markets, but availability is limited.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:49.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4850 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):930mW (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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