Overview
The NTHL082N65S3F is a high-voltage, N-Channel SUPERFET III MOSFET from onsemi, designed to offer outstanding performance in various power systems. This device utilizes charge balance technology to achieve low on-resistance and reduced gate charge, making it ideal for applications requiring high efficiency and miniaturization. The SUPERFET III family is known for its superior switching performance and the ability to withstand extreme dv/dt rates, enhancing system reliability and reducing the need for additional components.
Key Specifications
| Parameter | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|
| Drain to Source Voltage (VDSS) | V | - | - | 650 |
| Gate to Source Voltage (VGSS) | V | - | - | ±30 |
| Continuous Drain Current (ID) | A | - | - | 40 (TC = 25°C), 25.5 (TC = 100°C) |
| Pulsed Drain Current (IDM) | A | - | - | 100 |
| Static Drain to Source On Resistance (RDS(on)) | mΩ | - | 70 | 82 |
| Gate Threshold Voltage (VGS(th)) | V | 3.0 | - | 5.0 |
| Total Gate Charge (Qg(tot)) | nC | - | 81 | - |
| Thermal Resistance, Junction to Case (RθJC) | °C/W | - | - | 0.4 |
| Operating and Storage Temperature Range (TJ, TSTG) | °C | -55 | - | 150 |
Key Features
- 650 V @ TJ = 25°C, 700 V @ TJ = 150°C
- Typical RDS(on) = 70 mΩ
- Ultra Low Gate Charge (Typ. Qg = 81 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
- 100% Avalanche Tested
- Pb-Free and RoHS Compliant
- Optimized reverse recovery performance of body diode to remove additional components and improve system reliability
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- EV Charger
- UPS / Solar
Q & A
- What is the maximum drain to source voltage (VDSS) of the NTHL082N65S3F MOSFET?
The maximum drain to source voltage (VDSS) is 650 V at TJ = 25°C and 700 V at TJ = 150°C.
- What is the typical on-resistance (RDS(on)) of this MOSFET?
The typical on-resistance (RDS(on)) is 70 mΩ.
- What is the total gate charge (Qg(tot)) at 10 V?
The total gate charge (Qg(tot)) at 10 V is typically 81 nC.
- Is the NTHL082N65S3F Pb-Free and RoHS Compliant?
- What are the typical applications for this MOSFET?
The typical applications include Telecom / Server Power Supplies, Industrial Power Supplies, EV Charger, and UPS / Solar systems.
- What is the maximum continuous drain current (ID) at TC = 25°C and TC = 100°C?
The maximum continuous drain current (ID) is 40 A at TC = 25°C and 25.5 A at TC = 100°C.
- What is the thermal resistance, junction to case (RθJC), of this MOSFET?
The thermal resistance, junction to case (RθJC), is 0.4 °C/W.
- What is the operating and storage temperature range for this device?
The operating and storage temperature range is from -55°C to 150°C.
- How does the optimized reverse recovery performance of the body diode benefit the system?
The optimized reverse recovery performance of the body diode can remove additional components and improve system reliability.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300°C for 1/8″ from the case for 5 seconds.
