NTD4860NT4G
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onsemi NTD4860NT4G

Manufacturer No:
NTD4860NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 10.4A/65A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4860NT4G is a dual-protected low-side smart, discrete device manufactured by onsemi. This N-Channel MOSFET is designed with a standard 40V gate level and features leading on-resistance, making it highly suitable for motor driver applications. It includes temperature and current limit protections, enhancing its reliability and performance in various electronic systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
RDS(ON) (On-Resistance)7.5 mΩ @ VGS = 10 V
ID (Continuous Drain Current)30 A
VGS(th) (Threshold Voltage)2.5 V @ ID = 250 μA
PackageTO-252-2 (DPAK)

Key Features

  • Dual protection: temperature and current limit
  • Low on-resistance (7.5 mΩ @ VGS = 10 V)
  • High continuous drain current (30 A)
  • Standard 40V gate level
  • ROHS compliant

Applications

The NTD4860NT4G is primarily used in motor driver applications due to its low on-resistance and high current handling capabilities. It is also suitable for other power management and switching applications where reliability and efficiency are critical.

Q & A

  1. What is the drain-source voltage rating of the NTD4860NT4G?
    The drain-source voltage rating is 30 V.
  2. What is the on-resistance of the NTD4860NT4G at VGS = 10 V?
    The on-resistance is 7.5 mΩ at VGS = 10 V.
  3. What is the continuous drain current of the NTD4860NT4G?
    The continuous drain current is 30 A.
  4. What is the threshold voltage of the NTD4860NT4G?
    The threshold voltage is 2.5 V at ID = 250 μA.
  5. What package type does the NTD4860NT4G come in?
    The NTD4860NT4G comes in a TO-252-2 (DPAK) package.
  6. Is the NTD4860NT4G ROHS compliant?
    Yes, the NTD4860NT4G is ROHS compliant.
  7. What are the primary applications of the NTD4860NT4G?
    The primary applications include motor driver and other power management and switching applications.
  8. Does the NTD4860NT4G have any built-in protections?
    Yes, it has dual protections: temperature and current limit.
  9. Is the NTD4860NT4G still in production?
    No, the NTD4860NT4G is no longer manufactured.
  10. Where can I find detailed specifications for the NTD4860NT4G?
    Detailed specifications can be found in the datasheet available on websites such as Mouser, Digi-Key, and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:10.4A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1308 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.28W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NTD4860NT4G NTD4865NT4G NTD4960NT4G NTD4863NT4G NTD4810NT4G NTD4860NAT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 30 V 25 V 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 10.4A (Ta), 65A (Tc) 8.5A (Ta), 44A (Tc) 8.9A (Ta), 55A (Tc) 9.2A (Ta), 49A (Tc) 9A (Ta), 54A (Tc) 10.4A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V -
Rds On (Max) @ Id, Vgs 7.5mOhm @ 30A, 10V 10.9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9.3mOhm @ 30A, 10V 10mOhm @ 30A, 10V 7.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 4.5 V 10.8 nC @ 4.5 V 22 nC @ 10 V 13.5 nC @ 4.5 V 11 nC @ 4.5 V 16.5 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1308 pF @ 12 V 827 pF @ 12 V 1300 pF @ 15 V 990 pF @ 12 V 1350 pF @ 12 V 1308 pF @ 12 V
FET Feature - - - - - -
Power Dissipation (Max) 1.28W (Ta), 50W (Tc) 1.27W (Ta), 33.3W (Tc) 1.07W (Ta), 35.71W (Tc) 1.27W (Ta), 36.6W (Tc) 1.4W (Ta), 50W (Tc) 1.28W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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