NTD4863NT4G
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onsemi NTD4863NT4G

Manufacturer No:
NTD4863NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 9.2A/49A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4863NT4G is a power MOSFET produced by onsemi, although it is currently obsolete and no longer manufactured. This component was designed for high-power applications requiring efficient switching and low on-resistance. Despite its obsolescence, it remains relevant for understanding the evolution of power MOSFET technology and for legacy system maintenance.

Key Specifications

ParameterValueConditions
Drain-to-Source On Resistance (RDS(on))8.4 - 9.3 mΩVGS = 10 V, ID = 30 A
Drain-to-Source On Resistance (RDS(on))12.8 - 14 mΩVGS = 4.5 V, ID = 30 A
Forward Transconductance-VGS = 10 V, ID = 30 A

Key Features

  • Low on-resistance, making it suitable for high-power switching applications.
  • High forward transconductance for efficient current control.
  • Designed for robust performance in demanding environments.

Applications

The NTD4863NT4G was typically used in high-power electronic systems such as DC-DC converters, motor control circuits, and power supplies. It was also suitable for applications in electric vehicles, industrial automation, and renewable energy systems.

Q & A

  1. What is the NTD4863NT4G? The NTD4863NT4G is a power MOSFET produced by onsemi.
  2. Is the NTD4863NT4G still in production? No, the NTD4863NT4G is obsolete and no longer manufactured.
  3. What are the key specifications of the NTD4863NT4G? Key specifications include a drain-to-source on resistance (RDS(on)) of 8.4 - 9.3 mΩ at VGS = 10 V and ID = 30 A, and 12.8 - 14 mΩ at VGS = 4.5 V and ID = 30 A.
  4. What are the typical applications of the NTD4863NT4G? It was used in high-power electronic systems such as DC-DC converters, motor control circuits, and power supplies.
  5. What are some alternatives to the NTD4863NT4G? Direct substitutes include the NTD4969NT4G from onsemi.
  6. Where can I find detailed specifications for the NTD4863NT4G? Detailed specifications can be found in the datasheet available from sources like Digi-Key, Arrow Electronics, and the official onsemi website.
  7. What is the significance of the forward transconductance in the NTD4863NT4G? The forward transconductance indicates the efficiency of current control, which is crucial for high-power switching applications.
  8. Can I still purchase the NTD4863NT4G? Although it is obsolete, some distributors may still have stock or offer substitutes.
  9. What services are available for the NTD4863NT4G from distributors? Some distributors offer PCB & SMT Assembly services and provide test reports for the component.
  10. Why is the NTD4863NT4G important despite being obsolete? It is important for understanding the evolution of power MOSFET technology and for maintaining legacy systems that use this component.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:9.2A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:990 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):1.27W (Ta), 36.6W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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NTD4863NAT4G
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NTD4863NA-1G
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Similar Products

Part Number NTD4863NT4G NTD4865NT4G NTD4963NT4G NTD4813NT4G NTD4860NT4G NTD4863NAT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 30 V 30 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta), 49A (Tc) 8.5A (Ta), 44A (Tc) 8.1A (Ta), 44A (Tc) 7.6A (Ta), 40A (Tc) 10.4A (Ta), 65A (Tc) 9.2A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 9.3mOhm @ 30A, 10V 10.9mOhm @ 30A, 10V 9.6mOhm @ 30A, 10V 13mOhm @ 30A, 10V 7.5mOhm @ 30A, 10V 9.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 4.5 V 10.8 nC @ 4.5 V 16.2 nC @ 10 V 7.9 nC @ 4.5 V 16.5 nC @ 4.5 V 13.5 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 990 pF @ 12 V 827 pF @ 12 V 1035 pF @ 12 V 860 pF @ 12 V 1308 pF @ 12 V 990 pF @ 12 V
FET Feature - - - - - -
Power Dissipation (Max) 1.27W (Ta), 36.6W (Tc) 1.27W (Ta), 33.3W (Tc) 1.1W (Ta), 35.7W (Tc) 1.27W (Ta), 35.3W (Tc) 1.28W (Ta), 50W (Tc) 1.27W (Ta), 36.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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