NTD250N65S3H
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onsemi NTD250N65S3H

Manufacturer No:
NTD250N65S3H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
POWER MOSFET, N-CHANNEL, SUPERFE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD250N65S3H is a high-voltage, N-channel MOSFET from ON Semiconductor's SUPERFET III family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss and provide superior switching performance, making it ideal for various power systems to improve overall system efficiency.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 650 V
Gate to Source Voltage (VGSS) ±30 V
Continuous Drain Current (ID) 13 A (at TC = 25°C)
Pulsed Drain Current (IDM) 36 A
Static Drain to Source On Resistance (RDS(on)) 201 mΩ (Typ.)
Total Gate Charge (Qg) 24 nC (Typ.) nC
Effective Output Capacitance (Coss(eff.)) 229 pF (Typ.) pF
Operating and Storage Temperature Range (TJ, TSTG) −55 to +150 °C
Maximum Lead Temperature for Soldering 260 °C

Key Features

  • High voltage rating of 650 V at TJ = 150°C
  • Typical on-resistance (RDS(on)) of 201 mΩ
  • Ultra-low gate charge (Typ. Qg = 24 nC)
  • Low effective output capacitance (Typ. Coss(eff.) = 229 pF)
  • 100% avalanche tested
  • Pb-free and RoHS compliant

Applications

  • Computing and display power supplies
  • Telecom and server power supplies
  • Industrial power supplies
  • Lighting, charger, and adapter applications

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the NTD250N65S3H MOSFET?

    The maximum drain to source voltage (VDSS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the NTD250N65S3H?

    The typical on-resistance (RDS(on)) is 201 mΩ.

  3. What is the total gate charge (Qg) of the NTD250N65S3H?

    The total gate charge (Qg) is typically 24 nC.

  4. Is the NTD250N65S3H Pb-free and RoHS compliant?
  5. What are the typical applications of the NTD250N65S3H MOSFET?

    The NTD250N65S3H is typically used in computing and display power supplies, telecom and server power supplies, industrial power supplies, and lighting, charger, and adapter applications.

  6. What is the maximum continuous drain current (ID) of the NTD250N65S3H at 25°C?

    The maximum continuous drain current (ID) at 25°C is 13 A.

  7. What is the maximum pulsed drain current (IDM) of the NTD250N65S3H?

    The maximum pulsed drain current (IDM) is 36 A.

  8. What is the operating and storage temperature range of the NTD250N65S3H?

    The operating and storage temperature range is −55 to +150°C.

  9. Is the NTD250N65S3H suitable for use in life support systems or medical devices?

    No, the NTD250N65S3H is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.

  10. What is the maximum lead temperature for soldering the NTD250N65S3H?

    The maximum lead temperature for soldering is 260°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1261 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):106W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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