NTD250N65S3H
  • Share:

onsemi NTD250N65S3H

Manufacturer No:
NTD250N65S3H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
POWER MOSFET, N-CHANNEL, SUPERFE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD250N65S3H is a high-voltage, N-channel MOSFET from ON Semiconductor's SUPERFET III family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss and provide superior switching performance, making it ideal for various power systems to improve overall system efficiency.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 650 V
Gate to Source Voltage (VGSS) ±30 V
Continuous Drain Current (ID) 13 A (at TC = 25°C)
Pulsed Drain Current (IDM) 36 A
Static Drain to Source On Resistance (RDS(on)) 201 mΩ (Typ.)
Total Gate Charge (Qg) 24 nC (Typ.) nC
Effective Output Capacitance (Coss(eff.)) 229 pF (Typ.) pF
Operating and Storage Temperature Range (TJ, TSTG) −55 to +150 °C
Maximum Lead Temperature for Soldering 260 °C

Key Features

  • High voltage rating of 650 V at TJ = 150°C
  • Typical on-resistance (RDS(on)) of 201 mΩ
  • Ultra-low gate charge (Typ. Qg = 24 nC)
  • Low effective output capacitance (Typ. Coss(eff.) = 229 pF)
  • 100% avalanche tested
  • Pb-free and RoHS compliant

Applications

  • Computing and display power supplies
  • Telecom and server power supplies
  • Industrial power supplies
  • Lighting, charger, and adapter applications

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the NTD250N65S3H MOSFET?

    The maximum drain to source voltage (VDSS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the NTD250N65S3H?

    The typical on-resistance (RDS(on)) is 201 mΩ.

  3. What is the total gate charge (Qg) of the NTD250N65S3H?

    The total gate charge (Qg) is typically 24 nC.

  4. Is the NTD250N65S3H Pb-free and RoHS compliant?
  5. What are the typical applications of the NTD250N65S3H MOSFET?

    The NTD250N65S3H is typically used in computing and display power supplies, telecom and server power supplies, industrial power supplies, and lighting, charger, and adapter applications.

  6. What is the maximum continuous drain current (ID) of the NTD250N65S3H at 25°C?

    The maximum continuous drain current (ID) at 25°C is 13 A.

  7. What is the maximum pulsed drain current (IDM) of the NTD250N65S3H?

    The maximum pulsed drain current (IDM) is 36 A.

  8. What is the operating and storage temperature range of the NTD250N65S3H?

    The operating and storage temperature range is −55 to +150°C.

  9. Is the NTD250N65S3H suitable for use in life support systems or medical devices?

    No, the NTD250N65S3H is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.

  10. What is the maximum lead temperature for soldering the NTD250N65S3H?

    The maximum lead temperature for soldering is 260°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1261 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):106W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.02
37

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL