NTD20N03L27T4G
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onsemi NTD20N03L27T4G

Manufacturer No:
NTD20N03L27T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 20A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi NTD20N03L27T4G is a high-performance, N-Channel power MOSFET designed for a variety of applications requiring low on-resistance and high current handling. This device is part of onsemi's portfolio of discrete semiconductor products and is particularly suited for motor driver applications due to its robust features and protections.

Key Specifications

ParameterValue
FET TypeMOSFET N-Channel Metal Oxide
Drain to Source Voltage (Vdss)30V
Continuous Drain Current (Id)20A (Ta), 1.75W (Ta), 74W (Tc)
PackageDPAK-3 (Surface Mount)
Gate LevelLogic Level Gate
On-Resistance (Rds(on))Leading on-resistance for its class

Key Features

  • Dual-protected with temperature and current limit, enhancing reliability and safety in operation.
  • Logic Level Gate, allowing for easy control from standard logic circuits.
  • Low on-resistance, which minimizes power losses and improves efficiency.
  • High continuous drain current capability, making it suitable for high-power applications.
  • Surface Mount DPAK-3 package, facilitating easy integration into modern PCB designs.

Applications

The onsemi NTD20N03L27T4G is primarily used in motor driver applications due to its high current handling and low on-resistance. It is also suitable for other high-power applications such as power supplies, DC-DC converters, and general-purpose switching.

Q & A

  1. What is the maximum drain to source voltage of the NTD20N03L27T4G? The maximum drain to source voltage is 30V.
  2. What is the continuous drain current of the NTD20N03L27T4G? The continuous drain current is 20A at ambient temperature (Ta) and 1.75W at junction temperature (Tc).
  3. What type of gate does the NTD20N03L27T4G have? The NTD20N03L27T4G has a logic level gate.
  4. What is the package type of the NTD20N03L27T4G? The package type is DPAK-3 (Surface Mount).
  5. What are the key protections of the NTD20N03L27T4G? The device is dual-protected with temperature and current limit.
  6. Why is the NTD20N03L27T4G suitable for motor driver applications? It is suitable due to its high current handling and low on-resistance.
  7. What other applications can the NTD20N03L27T4G be used in? It can be used in power supplies, DC-DC converters, and general-purpose switching.
  8. Where can I find detailed specifications for the NTD20N03L27T4G? Detailed specifications can be found on the datasheet available from onsemi's official website or through distributors like Mouser, Digi-Key, and Octopart.
  9. What is the significance of the low on-resistance in the NTD20N03L27T4G? Low on-resistance minimizes power losses and improves efficiency in high-power applications.
  10. Is the NTD20N03L27T4G easy to integrate into PCB designs? Yes, the surface mount DPAK-3 package facilitates easy integration into modern PCB designs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:27mOhm @ 10A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1260 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.75W (Ta), 74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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NTD20N03L27-1G
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NTD20N03L27G
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Similar Products

Part Number NTD20N03L27T4G NTD20N03L27T4
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V -
Rds On (Max) @ Id, Vgs 27mOhm @ 10A, 5V 27mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.9 nC @ 10 V 18.9 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1260 pF @ 25 V 1260 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.75W (Ta), 74W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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