NDS332P
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onsemi NDS332P

Manufacturer No:
NDS332P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 1A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDS332P is a P-Channel Logic Level Enhancement Mode Field Effect Transistor produced by onsemi. This transistor is fabricated using onsemi's proprietary, high cell density, DMOS technology. It is designed to operate at logic level thresholds, making it suitable for a wide range of applications where low threshold voltages are required. The NDS332P is packaged in a SuperSOT-3 package, which is compact and efficient for space-constrained designs.

Key Specifications

ParameterValue
Channel TypeP-Channel
Maximum Drain-Source Voltage (Vds)-20V
Maximum Continuous Drain Current (Id)-1A
On-Resistance (Rds(on))0.41Ω
Power Dissipation (Pd)0.5W
Threshold Voltage (Vth)0.7V to 1.5V
Package TypeSuperSOT-3

Key Features

  • Logic Level Enhancement Mode: Compatible with standard logic level signals.
  • Low On-Resistance: 0.41Ω, which minimizes power losses.
  • High Cell Density DMOS Technology: Enhances performance and efficiency.
  • Compact SuperSOT-3 Package: Suitable for space-constrained designs.
  • Low Threshold Voltage: Between 0.7V and 1.5V, making it versatile for various applications.

Applications

  • Power Switching: Ideal for applications requiring low on-resistance and high efficiency.
  • Load Switching: Suitable for switching loads in various electronic systems.
  • Voltage Regulation: Can be used in voltage regulator circuits due to its low on-resistance.
  • Audio and Video Switching: Applicable in audio and video switching circuits where low distortion is required.
  • General Purpose Amplification: Useful in general-purpose amplification and switching applications.

Q & A

  1. What is the maximum drain-source voltage of the NDS332P?
    The maximum drain-source voltage (Vds) of the NDS332P is -20V.
  2. What is the maximum continuous drain current of the NDS332P?
    The maximum continuous drain current (Id) of the NDS332P is -1A.
  3. What is the on-resistance (Rds(on)) of the NDS332P?
    The on-resistance (Rds(on)) of the NDS332P is 0.41Ω.
  4. In what package is the NDS332P available?
    The NDS332P is available in a SuperSOT-3 package.
  5. What is the typical threshold voltage range of the NDS332P?
    The typical threshold voltage range of the NDS332P is between 0.7V and 1.5V.
  6. What technology is used to fabricate the NDS332P?
    The NDS332P is fabricated using onsemi's proprietary, high cell density DMOS technology.
  7. What are some common applications of the NDS332P?
    The NDS332P is commonly used in power switching, load switching, voltage regulation, audio and video switching, and general-purpose amplification.
  8. Is the NDS332P suitable for logic level signals?
    Yes, the NDS332P is designed to be compatible with standard logic level signals.
  9. What is the power dissipation (Pd) of the NDS332P?
    The power dissipation (Pd) of the NDS332P is 0.5W.
  10. Where can I find detailed specifications for the NDS332P?
    Detailed specifications for the NDS332P can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and TME.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:300mOhm @ 1.1A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number NDS332P NDS352P NDS336P
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 850mA (Ta) 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V 4.5V, 10V 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.1A, 4.5V 350mOhm @ 1A, 10V 200mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 2.5V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 4.5 V 4 nC @ 5 V 8.5 nC @ 4.5 V
Vgs (Max) ±8V ±12V ±8V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 10 V 125 pF @ 10 V 360 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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