Overview
The NDS332P is a P-Channel Logic Level Enhancement Mode Field Effect Transistor produced by onsemi. This transistor is fabricated using onsemi's proprietary, high cell density, DMOS technology. It is designed to operate at logic level thresholds, making it suitable for a wide range of applications where low threshold voltages are required. The NDS332P is packaged in a SuperSOT-3 package, which is compact and efficient for space-constrained designs.
Key Specifications
Parameter | Value |
---|---|
Channel Type | P-Channel |
Maximum Drain-Source Voltage (Vds) | -20V |
Maximum Continuous Drain Current (Id) | -1A |
On-Resistance (Rds(on)) | 0.41Ω |
Power Dissipation (Pd) | 0.5W |
Threshold Voltage (Vth) | 0.7V to 1.5V |
Package Type | SuperSOT-3 |
Key Features
- Logic Level Enhancement Mode: Compatible with standard logic level signals.
- Low On-Resistance: 0.41Ω, which minimizes power losses.
- High Cell Density DMOS Technology: Enhances performance and efficiency.
- Compact SuperSOT-3 Package: Suitable for space-constrained designs.
- Low Threshold Voltage: Between 0.7V and 1.5V, making it versatile for various applications.
Applications
- Power Switching: Ideal for applications requiring low on-resistance and high efficiency.
- Load Switching: Suitable for switching loads in various electronic systems.
- Voltage Regulation: Can be used in voltage regulator circuits due to its low on-resistance.
- Audio and Video Switching: Applicable in audio and video switching circuits where low distortion is required.
- General Purpose Amplification: Useful in general-purpose amplification and switching applications.
Q & A
- What is the maximum drain-source voltage of the NDS332P?
The maximum drain-source voltage (Vds) of the NDS332P is -20V. - What is the maximum continuous drain current of the NDS332P?
The maximum continuous drain current (Id) of the NDS332P is -1A. - What is the on-resistance (Rds(on)) of the NDS332P?
The on-resistance (Rds(on)) of the NDS332P is 0.41Ω. - In what package is the NDS332P available?
The NDS332P is available in a SuperSOT-3 package. - What is the typical threshold voltage range of the NDS332P?
The typical threshold voltage range of the NDS332P is between 0.7V and 1.5V. - What technology is used to fabricate the NDS332P?
The NDS332P is fabricated using onsemi's proprietary, high cell density DMOS technology. - What are some common applications of the NDS332P?
The NDS332P is commonly used in power switching, load switching, voltage regulation, audio and video switching, and general-purpose amplification. - Is the NDS332P suitable for logic level signals?
Yes, the NDS332P is designed to be compatible with standard logic level signals. - What is the power dissipation (Pd) of the NDS332P?
The power dissipation (Pd) of the NDS332P is 0.5W. - Where can I find detailed specifications for the NDS332P?
Detailed specifications for the NDS332P can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and TME.