MMBF2201NT1G
  • Share:

onsemi MMBF2201NT1G

Manufacturer No:
MMBF2201NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 300MA SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBF2201NT1G is a power MOSFET produced by onsemi, designed for high-performance and low-power applications. This N-channel MOSFET is packaged in the compact SC-70/SOT-323 form factor, making it ideal for space-constrained designs. With its low on-resistance (RDS(on)) and high current handling capabilities, this device is suited for a variety of electronic systems requiring efficient power management.

Key Specifications

ParameterValue
Voltage Rating (Vds)20 V
Continuous Drain Current (Id)300 mA
On-Resistance (RDS(on))1 Ω @ 10 V, 300 mA
Threshold Voltage (Vth)2.4 V
Power Dissipation (Pd)150 mW
Package TypeSC-70/SOT-323
Number of Pins3

Key Features

  • Low on-resistance (RDS(on)) to minimize power loss and conserve energy.
  • Compact SC-70/SOT-323 package for space-efficient designs.
  • High current handling capability of up to 300 mA.
  • Low threshold voltage of 2.4 V for easy switching.
  • Rohs compliant, ensuring environmental sustainability.

Applications

The MMBF2201NT1G is suitable for a wide range of applications, including but not limited to:

  • Power management in portable electronics.
  • Switching circuits in consumer electronics.
  • Automotive systems requiring low-power, high-efficiency MOSFETs.
  • Industrial control systems and automation.
  • Medical devices where compact, efficient power management is critical.

Q & A

  1. What is the voltage rating of the MMBF2201NT1G MOSFET?
    The voltage rating (Vds) of the MMBF2201NT1G is 20 V.
  2. What is the continuous drain current of the MMBF2201NT1G?
    The continuous drain current (Id) is 300 mA.
  3. What is the on-resistance (RDS(on)) of the MMBF2201NT1G?
    The on-resistance (RDS(on)) is 1 Ω @ 10 V, 300 mA.
  4. What is the threshold voltage (Vth) of the MMBF2201NT1G?
    The threshold voltage (Vth) is 2.4 V.
  5. What is the power dissipation (Pd) of the MMBF2201NT1G?
    The power dissipation (Pd) is 150 mW.
  6. What package type is the MMBF2201NT1G available in?
    The MMBF2201NT1G is available in the SC-70/SOT-323 package.
  7. Is the MMBF2201NT1G RoHS compliant?
    Yes, the MMBF2201NT1G is RoHS compliant.
  8. What are some common applications of the MMBF2201NT1G?
    The MMBF2201NT1G is commonly used in power management for portable electronics, switching circuits in consumer electronics, automotive systems, industrial control systems, and medical devices.
  9. What are the benefits of the low on-resistance (RDS(on)) of the MMBF2201NT1G?
    The low on-resistance minimizes power loss and helps conserve energy.
  10. How many pins does the MMBF2201NT1G have?
    The MMBF2201NT1G has 3 pins.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):150mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-70-3 (SOT323)
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.39
786

Please send RFQ , we will respond immediately.

Same Series
MMBF2201NT1
MMBF2201NT1
MOSFET N-CH 20V 300MA SOT-323
NVF2201NT1G
NVF2201NT1G
MOSFET N-CH 20V 300MA SC70-3

Similar Products

Part Number MMBF2201NT1G MMBF2201NT1
Manufacturer onsemi onsemi
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 1Ohm @ 300mA, 10V 1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 5 V 45 pF @ 5 V
FET Feature - -
Power Dissipation (Max) 150mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323)
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP