MJE15033G
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onsemi MJE15033G

Manufacturer No:
MJE15033G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS PNP 250V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE15033G is a PNP bipolar power transistor manufactured by onsemi. This transistor is designed for high-frequency applications, particularly as drivers in audio amplifiers. It is part of a complementary pair with the MJE15032 (NPN) transistor. The MJE15033G is known for its high DC current gain, high current gain-bandwidth product, and its compact TO-220AB package. The device is Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

Specification Value Unit
Transistor Type PNP
Maximum DC Collector Current 8 A
Maximum Collector-Emitter Voltage 250 Vdc
Maximum Collector-Emitter Saturation Voltage 0.5 V @ 1 A, 100 mA
Maximum Emitter-Base Voltage 5 Vdc
Maximum Collector Cutoff Current 10 µA
Minimum DC Current Gain 10 @ 2 A, 5 V
Gain Bandwidth Product 30 MHz @ IC = 500 mA, VCE = 10 V
Maximum Power Dissipation 2 W @ TA = 25°C
Operating Junction Temperature Range -65 to +150 °C
Package Type TO-220AB

Key Features

  • High DC current gain with a minimum of 10 at 2 A and 5 V.
  • High current gain-bandwidth product of 30 MHz.
  • Compact TO-220AB package, which is Pb-free and RoHS compliant.
  • Maximum collector-emitter voltage of 250 Vdc and maximum collector current of 8 A.
  • Low collector-emitter saturation voltage of 0.5 V at 1 A and 100 mA.
  • Operating junction temperature range from -65°C to +150°C.

Applications

The MJE15033G transistor is primarily designed for use as high-frequency drivers in audio amplifiers. Its high current gain, high gain-bandwidth product, and robust package make it suitable for various audio and power amplification applications. Additionally, it can be used in other high-frequency driver applications where reliability and performance are critical.

Q & A

  1. What is the transistor type of the MJE15033G?

    The MJE15033G is a PNP bipolar power transistor.

  2. What is the maximum DC collector current of the MJE15033G?

    The maximum DC collector current is 8 A.

  3. What is the maximum collector-emitter voltage of the MJE15033G?

    The maximum collector-emitter voltage is 250 Vdc.

  4. What is the gain-bandwidth product of the MJE15033G?

    The gain-bandwidth product is 30 MHz at IC = 500 mA and VCE = 10 V.

  5. What is the package type of the MJE15033G?

    The package type is TO-220AB.

  6. Is the MJE15033G Pb-free and RoHS compliant?
  7. What is the operating junction temperature range of the MJE15033G?
  8. What are the typical applications of the MJE15033G?
  9. What is the maximum power dissipation of the MJE15033G?
  10. What is the minimum DC current gain of the MJE15033G?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):250 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2A, 5V
Power - Max:50 W
Frequency - Transition:30MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Same Series
MJE15032G
MJE15032G
TRANS NPN 250V 8A TO220
MJE15033
MJE15033
TRANS PNP 250V 8A TO220
MJE15032
MJE15032
TRANS NPN 250V 8A TO220

Similar Products

Part Number MJE15033G MJE15034G MJE15035G MJE15030G MJE15031G MJE15032G MJE15033
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Obsolete
Transistor Type PNP NPN PNP NPN PNP NPN PNP
Current - Collector (Ic) (Max) 8 A 4 A 4 A 8 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 250 V 350 V 350 V 150 V 150 V 250 V 250 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 100µA 100µA 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 20 @ 4A, 2V 20 @ 4A, 2V 10 @ 2A, 5V 10 @ 2A, 5V
Power - Max 50 W 2 W 2 W 50 W 50 W 50 W 50 W
Frequency - Transition 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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