MJE15030G
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onsemi MJE15030G

Manufacturer No:
MJE15030G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 150V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE15030G is a 150V silicon NPN complementary plastic power transistor manufactured by onsemi. This device is specifically designed for use as high-frequency drivers in audio amplifiers, leveraging its high current gain-bandwidth product and robust thermal characteristics.

The transistor is packaged in a TO-220 compact case, which is Pb-free and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 150 Vdc
Collector-Base Voltage VCB 150 Vdc
Emitter-Base Voltage VEB 5.0 Vdc
Collector Current - Continuous IC 8.0 Adc
Collector Current - Peak ICM 16 Adc
Base Current IB 2.0 Adc
Total Device Dissipation @ TC = 25°C PD 50 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C
Thermal Resistance, Junction-to-Case RJC 2.5 °C/W
Thermal Resistance, Junction-to-Ambient RJA 62.5 °C/W
Current Gain-Bandwidth Product fT 30 MHz

Key Features

  • High Current Gain-Bandwidth Product: Ensures high-frequency performance, making it suitable for audio amplifier applications.
  • TO-220 Compact Package: Provides a robust and space-efficient design.
  • Pb-free and RoHS Compliant: Meets environmental and regulatory standards.
  • High Collector Current: Supports continuous and peak collector currents up to 8.0 A and 16 A, respectively.
  • Wide Operating Temperature Range: Operates reliably from -65°C to +150°C.
  • Low Thermal Resistance: Enhances heat dissipation with a junction-to-case thermal resistance of 2.5°C/W.

Applications

The MJE15030G is primarily designed for use as high-frequency drivers in audio amplifiers. Its high current gain-bandwidth product and robust thermal characteristics make it an ideal choice for various audio equipment and systems.

  • Audio Amplifiers: High-frequency drivers in professional and consumer audio systems.
  • Power Amplifiers: Used in power amplifiers requiring high current and voltage handling.
  • Industrial Control Systems: Suitable for high-power switching applications in industrial environments.

Q & A

  1. What is the maximum collector-emitter voltage of the MJE15030G?

    The maximum collector-emitter voltage (VCEO) of the MJE15030G is 150 Vdc.

  2. What is the continuous collector current rating of the MJE15030G?

    The continuous collector current (IC) rating of the MJE15030G is 8.0 Adc.

  3. What is the peak collector current rating of the MJE15030G?

    The peak collector current (ICM) rating of the MJE15030G is 16 Adc.

  4. What is the thermal resistance, junction-to-case, of the MJE15030G?

    The thermal resistance, junction-to-case (RJC), of the MJE15030G is 2.5°C/W.

  5. Is the MJE15030G Pb-free and RoHS compliant?

    Yes, the MJE15030G is Pb-free and RoHS compliant).

  6. What is the operating temperature range of the MJE15030G?

    The operating and storage junction temperature range of the MJE15030G is -65°C to +150°C).

  7. What is the current gain-bandwidth product of the MJE15030G?

    The current gain-bandwidth product (fT) of the MJE15030G is 30 MHz).

  8. What package type does the MJE15030G use?

    The MJE15030G is packaged in a TO-220 compact case).

  9. What are the primary applications of the MJE15030G?

    The MJE15030G is primarily used as high-frequency drivers in audio amplifiers and other high-power switching applications).

  10. What is the base current rating of the MJE15030G?

    The base current (IB) rating of the MJE15030G is 2.0 Adc).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):150 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 2V
Power - Max:50 W
Frequency - Transition:30MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number MJE15030G MJE15034G MJE15031G MJE15033G MJE15035G MJE15032G MJE15030
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Active Active Active Active Active
Transistor Type NPN NPN PNP PNP PNP NPN NPN
Current - Collector (Ic) (Max) 8 A 4 A 8 A 8 A 4 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 150 V 350 V 150 V 250 V 350 V 250 V 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100µA 10µA (ICBO) 100µA 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 2V 10 @ 2A, 5V 20 @ 4A, 2V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 20 @ 4A, 2V
Power - Max 50 W 2 W 50 W 50 W 2 W 50 W 50 W
Frequency - Transition 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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