Overview
The MJE15031G is a PNP complementary silicon plastic power transistor manufactured by onsemi. This device is part of a series that includes the MJE15028, MJE15029, MJE15030, and MJE15031, designed to be used as high-frequency drivers in audio amplifiers. The MJE15031G is known for its high current gain-bandwidth product and robust thermal performance, making it suitable for a variety of power amplification applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | |
| Maximum DC Collector Current | 8 | A |
| Maximum Collector-Emitter Voltage (Vce) | 150 | Vdc |
| Maximum Collector-Base Voltage (Vcb) | 150 | Vdc |
| Maximum Emitter-Base Voltage (Veb) | 5.0 | Vdc |
| Maximum Collector Power Dissipation (Pc) | 50 | W |
| Transition Frequency (ft) | 30 | MHz |
| Forward Current Transfer Ratio (hFE), MIN | 40 | |
| Package Type | TO-220AB | |
| Operating and Storage Junction Temperature Range | -65 to +150 | °C |
Key Features
- High Current Gain-Bandwidth Product: Ensures high-frequency performance suitable for audio amplifiers.
- Compact TO-220 Package: Facilitates easy mounting and thermal management.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- High DC Current Gain: Specified up to 4.0 A, with a minimum hFE of 40 at 3.0 A and 20 at 4.0 A.
- Low Collector-Emitter Saturation Voltage: Minimizes power loss during operation.
- Robust Thermal Performance: Thermal resistance, junction-to-case (RθJC) of 2.5 °C/W and junction-to-ambient (RθJA) of 62.5 °C/W.
Applications
- High-Frequency Drivers in Audio Amplifiers: Ideal for applications requiring high current gain and bandwidth.
- Power Amplification: Suitable for various power amplification roles due to its high current and voltage handling capabilities.
- Industrial and Consumer Electronics: Can be used in a wide range of electronic devices that require robust power transistors.
Q & A
- What is the maximum collector-emitter voltage of the MJE15031G transistor?
The maximum collector-emitter voltage (Vce) is 150 Vdc.
- What is the maximum collector current of the MJE15031G transistor?
The maximum DC collector current is 8 A.
- What is the package type of the MJE15031G transistor?
The package type is TO-220AB.
- Is the MJE15031G transistor Pb-Free and RoHS compliant?
Yes, it is Pb-Free and RoHS compliant.
- What is the transition frequency (ft) of the MJE15031G transistor?
The transition frequency (ft) is 30 MHz.
- What is the minimum forward current transfer ratio (hFE) of the MJE15031G transistor?
The minimum forward current transfer ratio (hFE) is 40 at 3.0 A.
- What is the operating and storage junction temperature range of the MJE15031G transistor?
The operating and storage junction temperature range is -65 to +150 °C.
- What are the typical applications of the MJE15031G transistor?
Typical applications include high-frequency drivers in audio amplifiers and various power amplification roles.
- How does the MJE15031G handle thermal performance?
The MJE15031G has a thermal resistance, junction-to-case (RθJC) of 2.5 °C/W and junction-to-ambient (RθJA) of 62.5 °C/W.
- Is the MJE15031G suitable for high-power applications?
Yes, it is suitable for high-power applications due to its high current and voltage handling capabilities and robust thermal performance.
