Overview
The MJE15032G is a silicon NPN complementary plastic power transistor manufactured by onsemi. This transistor is specifically designed for use as high-frequency drivers in audio amplifiers. It features a high DC current gain and a high current gain-bandwidth product, making it suitable for applications requiring robust and efficient signal amplification.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 250 | Vdc |
Collector-Base Voltage | VCB | 250 | Vdc |
Emitter-Base Voltage | VEB | 5.0 | Vdc |
Collector Current - Continuous | IC | 8.0 | Adc |
Collector Current - Peak | ICM | 16 | Adc |
Base Current | IB | 2.0 | Adc |
Total Power Dissipation @ TC = 25°C | PD | 50 | W |
Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 | °C |
Current Gain-Bandwidth Product | fT | 30 | MHz |
DC Current Gain (hFE) @ IC = 0.5 Adc, VCE = 5.0 Vdc | hFE | 70 | |
Package Type | TO-220 |
Key Features
- High DC current gain with a minimum of 70 at IC = 0.5 Adc and VCE = 5.0 Vdc.
- High current gain-bandwidth product of 30 MHz.
- Compact TO-220 package with epoxy meeting UL 94 V-0 at 0.125 inches.
- Pb-free and RoHS compliant.
- High collector-emitter voltage of 250 Vdc and collector-base voltage of 250 Vdc.
- Total power dissipation of 50 W at TC = 25°C.
- Operating and storage junction temperature range from -65 to +150°C.
Applications
The MJE15032G transistor is primarily designed for use as high-frequency drivers in audio amplifiers. Its high DC current gain and current gain-bandwidth product make it an ideal choice for applications requiring robust and efficient signal amplification in audio systems.
Q & A
- What is the maximum collector-emitter voltage of the MJE15032G transistor?
The maximum collector-emitter voltage (VCEO) is 250 Vdc.
- What is the continuous collector current rating of the MJE15032G transistor?
The continuous collector current (IC) is 8.0 Adc.
- What is the peak collector current rating of the MJE15032G transistor?
The peak collector current (ICM) is 16 Adc).
- What is the current gain-bandwidth product of the MJE15032G transistor?
The current gain-bandwidth product (fT) is 30 MHz).
- What is the DC current gain (hFE) of the MJE15032G transistor at IC = 0.5 Adc and VCE = 5.0 Vdc?
The DC current gain (hFE) is a minimum of 70 at IC = 0.5 Adc and VCE = 5.0 Vdc).
- What is the package type of the MJE15032G transistor?
The package type is TO-220).
- Is the MJE15032G transistor Pb-free and RoHS compliant?
- What is the operating and storage junction temperature range of the MJE15032G transistor?
The operating and storage junction temperature range is from -65 to +150°C).
- What is the total power dissipation of the MJE15032G transistor at TC = 25°C?
The total power dissipation (PD) is 50 W at TC = 25°C).
- For what primary application is the MJE15032G transistor designed?
The MJE15032G transistor is primarily designed for use as high-frequency drivers in audio amplifiers).