MJE15032G
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onsemi MJE15032G

Manufacturer No:
MJE15032G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 250V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE15032G is a silicon NPN complementary plastic power transistor manufactured by onsemi. This transistor is specifically designed for use as high-frequency drivers in audio amplifiers. It features a high DC current gain and a high current gain-bandwidth product, making it suitable for applications requiring robust and efficient signal amplification.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 250 Vdc
Collector-Base Voltage VCB 250 Vdc
Emitter-Base Voltage VEB 5.0 Vdc
Collector Current - Continuous IC 8.0 Adc
Collector Current - Peak ICM 16 Adc
Base Current IB 2.0 Adc
Total Power Dissipation @ TC = 25°C PD 50 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C
Current Gain-Bandwidth Product fT 30 MHz
DC Current Gain (hFE) @ IC = 0.5 Adc, VCE = 5.0 Vdc hFE 70
Package Type TO-220

Key Features

  • High DC current gain with a minimum of 70 at IC = 0.5 Adc and VCE = 5.0 Vdc.
  • High current gain-bandwidth product of 30 MHz.
  • Compact TO-220 package with epoxy meeting UL 94 V-0 at 0.125 inches.
  • Pb-free and RoHS compliant.
  • High collector-emitter voltage of 250 Vdc and collector-base voltage of 250 Vdc.
  • Total power dissipation of 50 W at TC = 25°C.
  • Operating and storage junction temperature range from -65 to +150°C.

Applications

The MJE15032G transistor is primarily designed for use as high-frequency drivers in audio amplifiers. Its high DC current gain and current gain-bandwidth product make it an ideal choice for applications requiring robust and efficient signal amplification in audio systems.

Q & A

  1. What is the maximum collector-emitter voltage of the MJE15032G transistor?

    The maximum collector-emitter voltage (VCEO) is 250 Vdc.

  2. What is the continuous collector current rating of the MJE15032G transistor?

    The continuous collector current (IC) is 8.0 Adc.

  3. What is the peak collector current rating of the MJE15032G transistor?

    The peak collector current (ICM) is 16 Adc).

  4. What is the current gain-bandwidth product of the MJE15032G transistor?

    The current gain-bandwidth product (fT) is 30 MHz).

  5. What is the DC current gain (hFE) of the MJE15032G transistor at IC = 0.5 Adc and VCE = 5.0 Vdc?

    The DC current gain (hFE) is a minimum of 70 at IC = 0.5 Adc and VCE = 5.0 Vdc).

  6. What is the package type of the MJE15032G transistor?

    The package type is TO-220).

  7. Is the MJE15032G transistor Pb-free and RoHS compliant?
  8. What is the operating and storage junction temperature range of the MJE15032G transistor?

    The operating and storage junction temperature range is from -65 to +150°C).

  9. What is the total power dissipation of the MJE15032G transistor at TC = 25°C?

    The total power dissipation (PD) is 50 W at TC = 25°C).

  10. For what primary application is the MJE15032G transistor designed?

    The MJE15032G transistor is primarily designed for use as high-frequency drivers in audio amplifiers).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):250 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2A, 5V
Power - Max:50 W
Frequency - Transition:30MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number MJE15032G MJE15034G MJE15033G MJE15035G MJE15030G MJE15031G MJE15032
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Obsolete
Transistor Type NPN NPN PNP PNP NPN PNP NPN
Current - Collector (Ic) (Max) 8 A 4 A 8 A 4 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 250 V 350 V 250 V 350 V 150 V 150 V 250 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 100µA 100µA 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 20 @ 4A, 2V 20 @ 4A, 2V 10 @ 2A, 5V
Power - Max 50 W 2 W 50 W 2 W 50 W 50 W 50 W
Frequency - Transition 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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