MJE15032
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onsemi MJE15032

Manufacturer No:
MJE15032
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 250V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE15032 is a bipolar power transistor manufactured by onsemi, designed specifically for use as high-frequency drivers in audio amplifiers. This NPN transistor is part of a complementary pair, with the MJE15033 being its PNP counterpart. The device is housed in a TO-220 compact package, making it suitable for a variety of high-power audio applications.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 250 Vdc
Collector-Base Voltage VCB 250 Vdc
Emitter-Base Voltage VEB 5.0 Vdc
Collector Current - Continuous IC 8.0 Adc
Collector Current - Peak ICM 16 Adc
Base Current IB 2.0 Adc
Total Power Dissipation @ TC = 25°C PD 50 W
Total Power Dissipation @ TA = 25°C PD 2.0 W
Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 °C
Thermal Resistance, Junction-to-Case RJC 2.5 °C/W
Thermal Resistance, Junction-to-Ambient RJA 62.5 °C/W
Transition Frequency fT 30 MHz
DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) hFE 70 (Min)
DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) hFE 10 (Min)

Key Features

  • High DC Current Gain: Specified to 5.0 amperes with a minimum hFE of 70 at IC = 0.5 Adc and 10 at IC = 2.0 Adc.
  • High Current Gain-Bandwidth Product: Transition frequency (fT) of 30 MHz.
  • Compact Package: TO-220 package for efficient heat dissipation and space-saving design.
  • High Voltage Handling: Collector-Emitter Sustaining Voltage (VCEO) of 250 Vdc.
  • Thermal Performance: Thermal Resistance, Junction-to-Case (RJC) of 2.5 °C/W and Junction-to-Ambient (RJA) of 62.5 °C/W.
  • Environmental Compliance: Pb-Free and RoHS Compliant.
  • Reliability: Epoxy meets UL 94 V-0 @ 0.125 in.

Applications

The MJE15032 is primarily designed for use as high-frequency drivers in audio amplifiers. Its high current gain, high voltage handling, and robust thermal performance make it suitable for a variety of audio applications, including professional audio equipment, home audio systems, and automotive audio systems.

Q & A

  1. What is the maximum collector-emitter voltage of the MJE15032?

    The maximum collector-emitter voltage (VCEO) is 250 Vdc.

  2. What is the maximum continuous collector current of the MJE15032?

    The maximum continuous collector current (IC) is 8.0 Adc.

  3. What is the transition frequency (fT) of the MJE15032?

    The transition frequency (fT) is 30 MHz.

  4. What is the DC current gain (hFE) of the MJE15032 at IC = 0.5 Adc?

    The DC current gain (hFE) is 70 (Min) at IC = 0.5 Adc.

  5. Is the MJE15032 Pb-Free and RoHS Compliant?
  6. What is the thermal resistance, junction-to-case (RJC) of the MJE15032?

    The thermal resistance, junction-to-case (RJC) is 2.5 °C/W.

  7. What is the operating and storage junction temperature range of the MJE15032?

    The operating and storage junction temperature range is –65 to +150 °C.

  8. What package type is the MJE15032 available in?

    The MJE15032 is available in a TO-220 package.

  9. What are the primary applications of the MJE15032?

    The primary applications include high-frequency drivers in audio amplifiers.

  10. Does the MJE15032 meet UL 94 V-0 standards?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):250 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2A, 5V
Power - Max:50 W
Frequency - Transition:30MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Same Series
MJE15033G
MJE15033G
TRANS PNP 250V 8A TO220
MJE15032G
MJE15032G
TRANS NPN 250V 8A TO220
MJE15033
MJE15033
TRANS PNP 250V 8A TO220

Similar Products

Part Number MJE15032 MJE15032G MJE15033 MJE15034 MJE15035 MJE15030 MJE15031
Manufacturer onsemi onsemi onsemi onsemi onsemi NTE Electronics, Inc NTE Electronics, Inc
Product Status Obsolete Active Obsolete Obsolete Obsolete Active Active
Transistor Type NPN NPN PNP NPN PNP NPN PNP
Current - Collector (Ic) (Max) 8 A 8 A 8 A 4 A 4 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 250 V 250 V 250 V 350 V 350 V 150 V 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 20 @ 4A, 2V 20 @ 4A, 2V
Power - Max 50 W 50 W 50 W 2 W 2 W 50 W 50 W
Frequency - Transition 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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