MJE15034
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onsemi MJE15034

Manufacturer No:
MJE15034
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 350V 4A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE15034 is a high-performance bipolar junction transistor (BJT) manufactured by ON Semiconductor. This NPN transistor is designed for high-frequency applications and is particularly suited for use in audio amplifiers and other power-driven circuits. The device features a robust TO-220AB package, making it suitable for through-hole mounting. With its high current and voltage ratings, the MJE15034 is an excellent choice for a variety of power electronics and high-frequency driver applications.

Key Specifications

Category Specification
Transistor Type NPN
Collector Emitter Voltage (V
(ceo))
350 V
Collector Current (Ic) (Max) 4 A
Peak Collector Current 8 A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V
Power Dissipation (Pd) 50 W (Total), 2 W (Per Device)
Transition Frequency (ft) 30 MHz
Vce Saturation (Max) @ Ib, Ic 500 mV @ 100 mA, 1 A
Collector Cutoff Current (Max) 10 µA (ICBO)
Operating Temperature -65°C to 150°C (TJ)
Package / Case TO-220-3
Mounting Type Through Hole
RoHS Compliant Yes

Key Features

  • High Current and Voltage Ratings: The MJE15034 can handle up to 4 A of continuous collector current and 350 V of collector-emitter voltage, making it suitable for high-power applications.
  • High Frequency Capability: With a transition frequency of 30 MHz, this transistor is ideal for high-frequency driver applications.
  • Compact TO-220AB Package: The device is packaged in a TO-220AB case, which is epoxy sealed and meets UL 94 V0 standards, ensuring robustness and reliability.
  • RoHS Compliant: The MJE15034 is lead-free and RoHS compliant, making it environmentally friendly and compliant with current regulations.
  • Wide Operating Temperature Range: The transistor can operate over a temperature range of -65°C to 150°C, enhancing its versatility in various environments.

Applications

  • Audio Amplifiers: The MJE15034 is particularly suited for use in audio amplifiers due to its high current gain and frequency response.
  • Power Electronics: Its high power dissipation and current handling capabilities make it a good choice for various power electronics applications.
  • High-Frequency Drivers: The transistor's high transition frequency makes it suitable for driving high-frequency signals in various electronic circuits.
  • Industrial Control Systems: It can be used in industrial control systems where high reliability and robust performance are required.

Q & A

  1. What is the collector-emitter voltage rating of the MJE15034?

    The collector-emitter voltage rating of the MJE15034 is 350 V.

  2. What is the maximum collector current of the MJE15034?

    The maximum continuous collector current is 4 A, and the peak collector current is 8 A.

  3. What is the transition frequency of the MJE15034?

    The transition frequency (ft) of the MJE15034 is 30 MHz.

  4. Is the MJE15034 RoHS compliant?

    Yes, the MJE15034 is RoHS compliant and lead-free.

  5. What is the operating temperature range of the MJE15034?

    The operating temperature range is -65°C to 150°C (TJ).

  6. What type of package does the MJE15034 come in?

    The MJE15034 comes in a TO-220-3 package.

  7. What are some common applications of the MJE15034?

    Common applications include audio amplifiers, power electronics, high-frequency drivers, and industrial control systems.

  8. What is the maximum power dissipation of the MJE15034?

    The total power dissipation is 50 W, with 2 W per device.

  9. What is the DC current gain (hFE) of the MJE15034?

    The minimum DC current gain (hFE) is 10 at 2 A and 5 V.

  10. Is the MJE15034 suitable for through-hole mounting?

    Yes, the MJE15034 is designed for through-hole mounting.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2A, 5V
Power - Max:2 W
Frequency - Transition:30MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Same Series
MJE15035G
MJE15035G
TRANS PNP 350V 4A TO220
MJE15034
MJE15034
TRANS NPN 350V 4A TO220
MJE15035
MJE15035
TRANS PNP 350V 4A TO220

Similar Products

Part Number MJE15034 MJE15034G MJE15035 MJE15030 MJE15031 MJE15032 MJE15033
Manufacturer onsemi onsemi onsemi NTE Electronics, Inc NTE Electronics, Inc onsemi onsemi
Product Status Obsolete Active Obsolete Active Active Obsolete Obsolete
Transistor Type NPN NPN PNP NPN PNP NPN PNP
Current - Collector (Ic) (Max) 4 A 4 A 4 A 8 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 350 V 350 V 350 V 150 V 150 V 250 V 250 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 100µA 100µA 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 20 @ 4A, 2V 20 @ 4A, 2V 10 @ 2A, 5V 10 @ 2A, 5V
Power - Max 2 W 2 W 2 W 50 W 50 W 50 W 50 W
Frequency - Transition 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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