MJE15035G
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onsemi MJE15035G

Manufacturer No:
MJE15035G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS PNP 350V 4A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi MJE15035G is a high-performance PNP bipolar junction transistor (BJT) designed for various power and high-frequency applications. This transistor is part of the complementary silicon plastic power transistors series, which includes both NPN and PNP devices. The MJE15035G is specifically tailored for use as high-frequency drivers in audio amplifiers and other power electronics.

Key Specifications

ParameterValueUnit
Transistor TypePNP
Maximum DC Collector Current-4 A
Maximum Collector-Emitter Voltage-350 V
Maximum Collector-Base Voltage350 V
Maximum Emitter-Base Voltage5 V
Maximum Power Dissipation50 W
Package TypeTO-220AB
Mounting TypeThrough Hole
Maximum Operating Frequency30 MHz
Pin Count3
Number of Elements per Chip1
Maximum Operating Temperature+150 °C
Dimensions9.28 x 10.28 x 4.82 mm

Key Features

  • High current gain with a minimum DC current gain (hFE) of 100 at IC = 0.1 A and VCE = 5.0 V.
  • High voltage capability with a maximum collector-emitter voltage (VCEO) of 350 V.
  • Compact TO-220AB package, which is Pb-free and RoHS compliant.
  • High power dissipation of up to 50 W.
  • Designed for high-frequency applications, making it suitable for use as drivers in audio amplifiers.
  • Complementary pair with the MJE15034 NPN transistor, allowing for balanced circuit designs.

Applications

The onsemi MJE15035G PNP transistor is primarily designed for use in high-frequency driver applications, particularly in audio amplifiers. It is also suitable for other power electronics applications that require high current and voltage handling capabilities. Some specific use cases include:

  • Audio amplifiers and sound systems.
  • Power supplies and switching regulators.
  • Motor control and driver circuits.
  • High-frequency signal amplification and switching.

Q & A

  1. What is the maximum DC collector current of the MJE15035G transistor?
    The maximum DC collector current is -4 A.
  2. What is the maximum collector-emitter voltage of the MJE15035G transistor?
    The maximum collector-emitter voltage is -350 V.
  3. What is the package type of the MJE15035G transistor?
    The package type is TO-220AB.
  4. Is the MJE15035G transistor Pb-free and RoHS compliant?
    Yes, the MJE15035G transistor is Pb-free and RoHS compliant.
  5. What is the maximum operating frequency of the MJE15035G transistor?
    The maximum operating frequency is 30 MHz.
  6. What is the maximum power dissipation of the MJE15035G transistor?
    The maximum power dissipation is 50 W.
  7. What is the minimum DC current gain (hFE) of the MJE15035G transistor?
    The minimum DC current gain (hFE) is 100 at IC = 0.1 A and VCE = 5.0 V.
  8. What are the dimensions of the MJE15035G transistor?
    The dimensions are 9.28 x 10.28 x 4.82 mm.
  9. What is the maximum operating temperature of the MJE15035G transistor?
    The maximum operating temperature is +150 °C.
  10. What are some common applications of the MJE15035G transistor?
    Common applications include audio amplifiers, power supplies, motor control circuits, and high-frequency signal amplification.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2A, 5V
Power - Max:2 W
Frequency - Transition:30MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Same Series
MJE15035G
MJE15035G
TRANS PNP 350V 4A TO220
MJE15034
MJE15034
TRANS NPN 350V 4A TO220
MJE15035
MJE15035
TRANS PNP 350V 4A TO220

Similar Products

Part Number MJE15035G MJE15030G MJE15031G MJE15032G MJE15033G MJE15034G MJE15035
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Obsolete
Transistor Type PNP NPN PNP NPN PNP NPN PNP
Current - Collector (Ic) (Max) 4 A 8 A 8 A 8 A 8 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 350 V 150 V 150 V 250 V 250 V 350 V 350 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO) 100µA 100µA 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V 20 @ 4A, 2V 20 @ 4A, 2V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V 10 @ 2A, 5V
Power - Max 2 W 50 W 50 W 50 W 50 W 2 W 2 W
Frequency - Transition 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz 30MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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