Overview
The FQT3P20TF is a P-Channel enhancement mode power MOSFET produced by ON Semiconductor using their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for various applications including switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
Key Specifications
| Parameter | Symbol | Unit | Min | Typ | Max |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | V | -200 | - | - |
| Drain Current - Continuous (TC = 25°C) | ID | A | -0.67 | - | - |
| Drain Current - Continuous (TC = 70°C) | ID | A | -0.53 | - | - |
| Drain Current - Pulsed | IDM | A | -2.7 | - | - |
| Gate-Source Voltage | VGSS | V | ±30 | - | - |
| Single Pulsed Avalanche Energy | EAS | mJ | 150 | - | - |
| Avalanche Current | IAR | A | -0.67 | - | - |
| Repetitive Avalanche Energy | EAR | mJ | 0.25 | - | - |
| Peak Diode Recovery dv/dt | dv/dt | V/ns | -5.5 | - | - |
| Power Dissipation (TC = 25°C) | PD | W | 2.5 | - | - |
| Operating and Storage Temperature Range | TJ, TSTG | °C | -55 to +150 | - | - |
| Thermal Resistance, Junction-to-Ambient | RθJA | °C/W | 50 | - | - |
| Gate Threshold Voltage | VGS(th) | V | -3.0 | - | -5.0 |
| Static Drain-Source On-Resistance | RDS(on) | Ω | - | 2.06 | 2.7 |
Key Features
- High Voltage and Current Capability: -200 V, -0.67 A, with a maximum drain-source on-resistance (RDS(on)) of 2.7 Ω at VGS = 10 V and ID = 0.335 A.
- Low Gate Charge: Typical gate charge of 6.0 nC, which enhances switching performance.
- Low Crss (Reverse Transfer Capacitance): Typical value of 7.5 pF, contributing to better high-frequency performance.
- High Avalanche Energy Strength: Single pulsed avalanche energy of 150 mJ and repetitive avalanche energy of 0.25 mJ.
- Low Thermal Resistance: Junction-to-ambient thermal resistance of 50 °C/W.
Applications
- Switched Mode Power Supplies: Ideal for use in power supply circuits due to its high efficiency and low on-state resistance.
- Audio Amplifiers: Suitable for audio applications requiring high fidelity and low distortion.
- DC Motor Control: Used in motor control circuits for efficient and reliable operation.
- Variable Switching Power Applications: Applicable in various switching power applications where high performance and reliability are required.
Q & A
- What is the maximum drain-source voltage of the FQT3P20TF MOSFET?
The maximum drain-source voltage (VDSS) is -200 V.
- What is the continuous drain current rating at 25°C and 70°C?
The continuous drain current (ID) is -0.67 A at 25°C and -0.53 A at 70°C.
- What is the typical gate charge of the FQT3P20TF?
The typical gate charge (Qg) is 6.0 nC.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation (PD) is 2.5 W at 25°C.
- What is the operating and storage temperature range of the FQT3P20TF?
The operating and storage temperature range (TJ, TSTG) is -55 to +150 °C.
- What is the thermal resistance, junction-to-ambient, of the FQT3P20TF?
The thermal resistance, junction-to-ambient (RθJA), is 50 °C/W.
- What are the typical applications of the FQT3P20TF MOSFET?
The FQT3P20TF is typically used in switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
- What is the gate threshold voltage of the FQT3P20TF?
The gate threshold voltage (VGS(th)) ranges from -3.0 V to -5.0 V.
- What is the maximum drain-source diode forward current of the FQT3P20TF?
The maximum continuous drain-source diode forward current (IS) is -0.67 A, and the maximum pulsed drain-source diode forward current (ISM) is -2.7 A.
- What is the package type of the FQT3P20TF?
The FQT3P20TF is packaged in a SOT-223 4-lead package.
