FQT13N06LTF
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onsemi FQT13N06LTF

Manufacturer No:
FQT13N06LTF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 2.8A SOT223-4
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The FQT13N06LTF is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for various applications including switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 60 V
Continuous Drain Current (ID) at TC = 25°C 2.8 A
Continuous Drain Current (ID) at TC = 70°C 2.24 A
Pulsed Drain Current (IDM) 11.2 A
Gate to Source Voltage (VGSS) ±25 V
Single Pulsed Avalanche Energy (EAS) 85 mJ
Gate Threshold Voltage (VGS(th)) 2.0 - 4.0 V
Static Drain to Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 1.4 A 0.11 - 0.14
Total Gate Charge (Qg) 5.8 - 7.5 nC
Thermal Resistance, Junction-to-Ambient (RθJA) 60 °C/W
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150 °C

Key Features

  • Low on-state resistance (RDS(on) = 140 mΩ max @ VGS = 10 V, ID = 1.4 A)
  • Low gate charge (Typ. 5.8 nC)
  • Low Crss (Typ. 15 pF)
  • 100% avalanche tested
  • Pb-free device
  • Superior switching performance and high avalanche energy strength

Applications

  • Switched mode power supplies
  • Audio amplifiers
  • DC motor control
  • Variable switching power applications

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FQT13N06LTF?

    The maximum drain to source voltage (VDSS) is 60 V.

  2. What is the continuous drain current (ID) at 25°C and 70°C?

    The continuous drain current (ID) is 2.8 A at 25°C and 2.24 A at 70°C.

  3. What is the pulsed drain current (IDM) rating?

    The pulsed drain current (IDM) is 11.2 A.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2.0 to 4.0 V.

  5. What is the typical total gate charge (Qg)?

    The typical total gate charge (Qg) is 5.8 nC.

  6. What is the thermal resistance, junction-to-ambient (RθJA)?

    The thermal resistance, junction-to-ambient (RθJA), is 60 °C/W.

  7. What is the operating and storage temperature range?

    The operating and storage temperature range is -55 to +150 °C.

  8. Is the FQT13N06LTF a Pb-free device?
  9. What are some typical applications of the FQT13N06LTF?

    Typical applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

  10. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 300 °C for 5 seconds.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number FQT13N06LTF FQT13N06TF
Manufacturer onsemi onsemi
Product Status Last Time Buy Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 1.4A, 10V 140mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 5 V 7.5 nC @ 10 V
Vgs (Max) ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 310 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.1W (Tc) 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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