FQT13N06TF
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onsemi FQT13N06TF

Manufacturer No:
FQT13N06TF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 2.8A SOT223-4
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The FQT13N06TF is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology enhances the performance and reliability of the MOSFET. Although the FQT13N06TF is currently obsolete and no longer manufactured, it remains a significant component in legacy systems and designs.

Key Specifications

Parameter Value Unit
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 2.8 A
Rds On - Drain-Source Resistance 140
Vgs - Gate-Source Threshold Voltage 2-4 V
Idm - Maximum Drain Current 11.2 A
Pd - Maximum Power Dissipation 2.1 W
Package Type SOT-223-4

Key Features

  • Enhancement mode N-Channel MOSFET
  • Utilizes onsemi's proprietary planar stripe and DMOS technology for improved performance
  • Low on-resistance (Rds On) of 140 mΩ
  • High drain-source breakdown voltage of 60 V
  • Maximum continuous drain current of 2.8 A
  • Maximum power dissipation of 2.1 W
  • Surface mount SOT-223-4 package

Applications

The FQT13N06TF MOSFET is suitable for various applications requiring high current handling and low on-resistance. These include:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Switching and amplification circuits
  • Automotive and industrial control systems

Q & A

  1. What is the drain-source breakdown voltage of the FQT13N06TF MOSFET?

    60 V

  2. What is the continuous drain current rating of the FQT13N06TF?

    2.8 A

  3. What is the on-resistance (Rds On) of the FQT13N06TF?

    140 mΩ

  4. What package type is the FQT13N06TF available in?

    SOT-223-4

  5. Is the FQT13N06TF still in production?

    No, the FQT13N06TF is obsolete and no longer manufactured

  6. What is the maximum power dissipation of the FQT13N06TF?

    2.1 W

  7. What is the gate-source threshold voltage range of the FQT13N06TF?

    2-4 V

  8. What is the maximum drain current (Idm) of the FQT13N06TF?

    11.2 A

  9. In what types of applications is the FQT13N06TF typically used?

    Power supplies, DC-DC converters, motor control, switching and amplification circuits, automotive and industrial control systems

  10. What technology is used in the production of the FQT13N06TF?

    onsemi's proprietary planar stripe and DMOS technology

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:140mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number FQT13N06TF FQT13N06LTF
Manufacturer onsemi onsemi
Product Status Last Time Buy Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 1.4A, 10V 110mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 6.4 nC @ 5 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25 V 350 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.1W (Tc) 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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