FQA13N80-F109
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onsemi FQA13N80-F109

Manufacturer No:
FQA13N80-F109
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 800V 12.6A TO3PN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQA13N80-F109 is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for various high-power applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDSS)800V
Continuous Drain Current (ID) at TC = 25°C12.6A
Continuous Drain Current (ID) at TC = 100°C8.0A
Pulsed Drain Current (IDM)50.4A
Gate-Source Voltage (VGSS)±30V
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 6.3 A0.58 - 0.75
Total Gate Charge (Qg)68 - 88nC
Power Dissipation (PD) at TC = 25°C300W
Operating and Storage Temperature Range-55 to +150°C
Maximum Lead Temperature for Soldering300°C

Key Features

  • Low on-state resistance (RDS(on)) of 0.58 - 0.75 mΩ at VGS = 10 V, ID = 6.3 A
  • Low gate charge (Qg) of 68 - 88 nC
  • Low Crss (Typ. 30 pF)
  • 100% Avalanche tested
  • Pb-Free and Halide Free device
  • High switching performance and high avalanche energy strength

Applications

The FQA13N80-F109 is suitable for a variety of high-power applications, including:

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts

Q & A

  1. What is the maximum drain to source voltage of the FQA13N80-F109?
    The maximum drain to source voltage (VDSS) is 800 V.
  2. What is the continuous drain current at 25°C and 100°C?
    The continuous drain current is 12.6 A at TC = 25°C and 8.0 A at TC = 100°C.
  3. What is the total gate charge of the FQA13N80-F109?
    The total gate charge (Qg) is 68 - 88 nC.
  4. Is the FQA13N80-F109 Pb-Free and Halide Free?
    Yes, the FQA13N80-F109 is Pb-Free and Halide Free.
  5. What are the typical applications of the FQA13N80-F109?
    The device is typically used in switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  6. What is the maximum power dissipation at 25°C?
    The maximum power dissipation (PD) at TC = 25°C is 300 W.
  7. What is the operating and storage temperature range of the FQA13N80-F109?
    The operating and storage temperature range is -55 to +150 °C.
  8. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 300 °C.
  9. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case (RθJC) is 0.42 °C/W.
  10. Is the device 100% avalanche tested?
    Yes, the device is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
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