FQA13N80-F109
  • Share:

onsemi FQA13N80-F109

Manufacturer No:
FQA13N80-F109
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 800V 12.6A TO3PN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQA13N80-F109 is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for various high-power applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDSS)800V
Continuous Drain Current (ID) at TC = 25°C12.6A
Continuous Drain Current (ID) at TC = 100°C8.0A
Pulsed Drain Current (IDM)50.4A
Gate-Source Voltage (VGSS)±30V
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 6.3 A0.58 - 0.75
Total Gate Charge (Qg)68 - 88nC
Power Dissipation (PD) at TC = 25°C300W
Operating and Storage Temperature Range-55 to +150°C
Maximum Lead Temperature for Soldering300°C

Key Features

  • Low on-state resistance (RDS(on)) of 0.58 - 0.75 mΩ at VGS = 10 V, ID = 6.3 A
  • Low gate charge (Qg) of 68 - 88 nC
  • Low Crss (Typ. 30 pF)
  • 100% Avalanche tested
  • Pb-Free and Halide Free device
  • High switching performance and high avalanche energy strength

Applications

The FQA13N80-F109 is suitable for a variety of high-power applications, including:

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts

Q & A

  1. What is the maximum drain to source voltage of the FQA13N80-F109?
    The maximum drain to source voltage (VDSS) is 800 V.
  2. What is the continuous drain current at 25°C and 100°C?
    The continuous drain current is 12.6 A at TC = 25°C and 8.0 A at TC = 100°C.
  3. What is the total gate charge of the FQA13N80-F109?
    The total gate charge (Qg) is 68 - 88 nC.
  4. Is the FQA13N80-F109 Pb-Free and Halide Free?
    Yes, the FQA13N80-F109 is Pb-Free and Halide Free.
  5. What are the typical applications of the FQA13N80-F109?
    The device is typically used in switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  6. What is the maximum power dissipation at 25°C?
    The maximum power dissipation (PD) at TC = 25°C is 300 W.
  7. What is the operating and storage temperature range of the FQA13N80-F109?
    The operating and storage temperature range is -55 to +150 °C.
  8. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 300 °C.
  9. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case (RθJC) is 0.42 °C/W.
  10. Is the device 100% avalanche tested?
    Yes, the device is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

$4.42
61

Please send RFQ , we will respond immediately.

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3