Overview
The FDV301N is an N-Channel logic level enhancement mode field effect transistor (FET) produced by onsemi using their proprietary high cell density DMOS technology. This device is specifically designed for low voltage applications and can replace multiple digital transistors, eliminating the need for bias resistors. It is optimized to minimize on-state resistance, making it suitable for a variety of low voltage digital circuits and high-speed switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 25 | V |
| Gate-Source Voltage (VGSS) | ±8 | V |
| Continuous Drain Current (ID) | 0.22 | A |
| Peak Drain Current (ID) | 0.5 | A |
| Maximum Power Dissipation (PD) | 0.35 | W |
| Operating Temperature Range | -55 to 150 | °C |
| On-State Resistance (RDS(ON)) at VGS = 2.7 V | 5 | Ω |
| On-State Resistance (RDS(ON)) at VGS = 4.5 V | 4 | Ω |
| Threshold Gate-Source Voltage (VGS(th)) | < 1.06 | V |
| ESD Rating (Human Body Model) | > 6 kV | |
| Package Type | SOT-23 |
Key Features
- Designed for low voltage applications, replacing digital transistors without the need for bias resistors.
- Very low level gate drive requirements, allowing direct operation in 3V circuits with VGS(th) < 1.06 V.
- Gate-Source Zener for ESD ruggedness, >6 kV Human Body Model.
- Low on-state resistance: RDS(ON) = 5 Ω @ VGS = 2.7 V and RDS(ON) = 4 Ω @ VGS = 4.5 V.
- High-speed switching capabilities, suitable for high efficiency applications with minimal power loss.
- Pb-free and halide-free, making it environmentally friendly.
Applications
- Low voltage digital circuits: The FDV301N can be triggered ON by applying voltages as low as 2.0V to its gate, making it suitable for all low voltage digital circuits.
- High-speed switching applications: Designed to replace conventional transistors in digital circuits, it is ideal for high-speed switching due to its low turn-on resistance and high efficiency.
- General usage: Suitable for many different applications where low voltage and high-speed switching are required).
Q & A
- What is the maximum drain-source voltage of the FDV301N?
The maximum drain-source voltage (VDSS) is 25 V.
- What is the continuous drain current rating of the FDV301N?
The continuous drain current (ID) is 0.22 A.
- What is the peak drain current rating of the FDV301N?
The peak drain current is 0.5 A.
- What is the maximum power dissipation of the FDV301N?
The maximum power dissipation (PD) is 0.35 W.
- What is the operating temperature range of the FDV301N?
The operating temperature range is -55°C to 150°C.
- What are the on-state resistance values at different gate-source voltages?
The on-state resistance (RDS(ON)) is 5 Ω @ VGS = 2.7 V and 4 Ω @ VGS = 4.5 V.
- What is the threshold gate-source voltage of the FDV301N?
The threshold gate-source voltage (VGS(th)) is less than 1.06 V.
- What is the ESD rating of the FDV301N?
The ESD rating is greater than 6 kV Human Body Model.
- In what package type is the FDV301N available?
The FDV301N is available in the SOT-23 package type.
- Is the FDV301N environmentally friendly?
Yes, the FDV301N is Pb-free and halide-free.
