Overview
The FDV303N is an N-Channel enhancement mode field effect transistor produced by onsemi using their proprietary, high cell density, DMOS technology. This technology is designed to minimize on-state resistance at low gate drive conditions, making it suitable for various applications in compact portable electronic devices. The device is particularly useful in battery circuits using one lithium or three cadmium or NMH cells and can be employed as an inverter or for high-efficiency miniature discrete DC/DC conversion in devices such as cellular phones and pagers.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Drain-Source Voltage (Vdss) | 25 | V |
| Continuous Drain Current (Id) | 0.68 | A |
| Pulsed Drain Current | 2 | A |
| Gate-Source Voltage (Vgs) | 8 | V |
| On-State Resistance (Rds(on)) @ Vgs = 4.5 V | 0.45 | Ω |
| On-State Resistance (Rds(on)) @ Vgs = 2.7 V | 0.6 | Ω |
| Threshold Voltage (Vgs(th)) | < 1.0 | V |
| Gate Charge (Qg) @ Vgs = 4.5 V | 2.3 | nC |
| Input Capacitance (Ciss) @ Vds = 10 V | 50 | pF |
| Maximum Power Dissipation (Pd) | 0.35 | W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 357 | °C/W |
| ESD Rating (Human Body Model) | 6 kV | |
| Package Type | SOT-23 (TO-236) |
Key Features
- Very low level gate drive requirements, allowing direct operation in 3V circuits with Vgs(th) < 1 V.
- Excellent on-state resistance even at low gate drive voltages (e.g., Rds(on) = 0.45 Ω @ Vgs = 4.5 V and Rds(on) = 0.6 Ω @ Vgs = 2.7 V).
- Gate-Source Zener for ESD ruggedness, > 6 kV Human Body Model.
- Compact industry standard SOT-23 surface mount package.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Applications
The FDV303N is designed for use in various compact portable electronic devices, including:
- Battery circuits using one lithium or three cadmium or NMH cells.
- Inverters and high-efficiency miniature discrete DC/DC conversion.
- Cellular phones and pagers.
Q & A
- What is the maximum drain-source voltage (Vdss) of the FDV303N?
25 V.
- What is the continuous drain current (Id) of the FDV303N?
0.68 A.
- What is the on-state resistance (Rds(on)) of the FDV303N at Vgs = 4.5 V?
0.45 Ω.
- What is the threshold voltage (Vgs(th)) of the FDV303N?
< 1.0 V.
- What is the ESD rating of the FDV303N?
> 6 kV Human Body Model.
- What package type does the FDV303N use?
SOT-23 (TO-236).
- Is the FDV303N RoHS compliant?
- What are some typical applications of the FDV303N?
Battery circuits, inverters, high-efficiency miniature discrete DC/DC conversion, cellular phones, and pagers.
- What is the maximum power dissipation (Pd) of the FDV303N?
0.35 W.
- What is the thermal resistance, junction-to-ambient (RθJA) of the FDV303N?
357 °C/W.
