Overview
The FDV303N_NB9U008 is an N-Channel enhancement mode field effect transistor (FET) produced by onsemi. This device is fabricated using onsemi's proprietary, high cell density, DMOS technology, which is designed to minimize on-state resistance, especially at low gate drive conditions. The FDV303N is suitable for various applications in compact portable electronic devices, such as cellular phones and pagers, and is particularly useful in battery circuits using lithium, cadmium, or nickel-metal hydride cells.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Drain-Source Voltage (VDSS) | 25 | V |
| Gate-Source Voltage (VGSS) | 8 | V |
| Continuous Drain Current (ID) | 0.68 | A |
| Pulsed Drain Current (ID) | 2 | A |
| Maximum Power Dissipation (PD) | 0.35 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | °C |
| Electrostatic Discharge Rating (ESD) | 6 kV | Human Body Model |
| On-State Resistance (RDS(ON)) at VGS = 4.5 V | 0.45 | Ω |
| On-State Resistance (RDS(ON)) at VGS = 2.7 V | 0.6 | Ω |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 357 | °C/W |
Key Features
- Very low on-state resistance, especially at low gate drive conditions.
- Very low level gate drive requirements, allowing direct operation in 3 V circuits with VGS(th) < 1 V.
- Gate-Source Zener for ESD ruggedness, > 6 kV Human Body Model.
- Compact industry standard SOT-23 surface mount package.
- Pb-Free, Halogen Free/BFR Free and RoHS compliant.
Applications
The FDV303N_NB9U008 is designed for use in various compact portable electronic devices such as cellular phones and pagers. It is particularly suited for battery circuits using one lithium or three cadmium or nickel-metal hydride cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in these devices.
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDV303N_NB9U008?
The maximum drain-source voltage (VDSS) is 25 V.
- What is the continuous drain current (ID) of the FDV303N_NB9U008?
The continuous drain current (ID) is 0.68 A.
- What is the maximum power dissipation (PD) of the FDV303N_NB9U008?
The maximum power dissipation (PD) is 0.35 W.
- What is the operating and storage temperature range of the FDV303N_NB9U008?
The operating and storage temperature range is -55 to 150 °C.
- What is the ESD rating of the FDV303N_NB9U008?
The ESD rating is > 6 kV Human Body Model.
- What is the on-state resistance (RDS(ON)) at VGS = 4.5 V?
The on-state resistance (RDS(ON)) at VGS = 4.5 V is 0.45 Ω.
- What is the on-state resistance (RDS(ON)) at VGS = 2.7 V?
The on-state resistance (RDS(ON)) at VGS = 2.7 V is 0.6 Ω.
- What package type is the FDV303N_NB9U008 available in?
The FDV303N_NB9U008 is available in a compact industry standard SOT-23 surface mount package.
- Is the FDV303N_NB9U008 RoHS compliant?
Yes, the FDV303N_NB9U008 is Pb-Free, Halogen Free/BFR Free and RoHS compliant.
- What are some typical applications of the FDV303N_NB9U008?
The FDV303N_NB9U008 is typically used in cellular phones, pagers, and other compact portable electronic devices for high-efficiency DC/DC conversion and as an inverter.
